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Device for preparing epitaxial silicon wafer and purity detection method for silicon source material

A silicon source and silicon wafer technology, applied in sampling devices, analytical materials, measuring devices, etc., can solve the problem of not having the ability to detect silicon source materials, and achieve the effects of simple device, pollution avoidance, and high safety.

Inactive Publication Date: 2019-11-05
XIAN ESWIN MATERIAL TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the existing equipment for preparing epitaxial silicon wafers, it does not have the ability to detect the silicon source materials provided by the raw material supply unit

Method used

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  • Device for preparing epitaxial silicon wafer and purity detection method for silicon source material
  • Device for preparing epitaxial silicon wafer and purity detection method for silicon source material
  • Device for preparing epitaxial silicon wafer and purity detection method for silicon source material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 3

[0058] Incoming material quality detection of embodiment 1 trichlorosilane

[0059] Before the preparation of epitaxial silicon wafers, the use of image 3 The device detects the purity of the purchased trichlorosilane.

[0060] Turn off the first switch and the second switch, and turn on the third switch and the fourth switch for detection. Hydrogen is transported from the second gas inlet to below the raw material liquid level of the trichlorosilane storage bottle, and a mixed vapor of trichlorosilane and hydrogen is formed in the space above the raw material liquid level. With the continuous introduction of hydrogen, the liquid level in the storage bottle The pressure in the above space increases, and the pressure serves as the driving force for transport, and the mixed vapor of trichlorosilane and hydrogen is diffused through the first gas inlet and transported to the chemical vapor deposition equipment.

[0061] The mixed steam reaches the chemical vapor deposition equi...

Embodiment 2 3

[0066] Embodiment 2 trichlorosilane gas sampling

[0067] For factories without testing conditions, this method can be used to take samples and send them to institutions with testing qualifications to complete the quality analysis of trichlorosilane.

[0068] use Figure 4 The device shown, samples trichlorosilane gas.

[0069] Turn off the first switch and the second switch, and turn on the third switch and the fourth switch for detection. Hydrogen is transported from the gas inlet of the second hydrogen inlet to below the raw material liquid level of the trichlorosilane storage bottle, and a mixed vapor of trichlorosilane and hydrogen is formed in the space above the raw material liquid level. With the continuous introduction of hydrogen, the hydrogen in the storage bottle The pressure in the space above the liquid surface increases, and the pressure acts as the driving force for the transportation, and the mixed vapor of trichlorosilane and hydrogen is diffused through th...

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Abstract

The invention relates to relates to a device for preparing an epitaxial silicon wafer and a purity detection method for a silicon source material, and belongs to the field of semiconductor preparation. The device comprises a raw material supply unit; the raw material supply unit comprises a silicon source material storage bottle, a silicon source material output pipe, a second switch, a second gasinlet, and a silicon source material detecting or sampling assembly; the second switch is arranged in the end where the silicon source material output pipe extends to the outside of the silicon source material storage bottle; the second gas inlet is arranged in part, positioned outside the silicon source material storage bottle, of the silicon source material output pipe, and is closer to the silicon source material storage bottle than the second switch; and the silicon source material detecting or sampling assembly is connected with a first gas inlet. The device is simple and highly safe, the purity of a silicon source material can be detected effectively during production, and the silicon source material whose purity is unqualified is avoided from polluting a raw material conveying pipeand a silicon deposition unit.

Description

technical field [0001] The invention relates to the field of semiconductor preparation, in particular to a device for preparing epitaxial silicon wafers and a method for detecting the purity of silicon source materials. Background technique [0002] In the silicon wafer epitaxy process, silicon compounds such as trichlorosilane (TCS) and dichlorosilane (DCS) need to be used as silicon source materials, and silicon atoms decomposed during high-temperature reactions form a silicon layer on the silicon wafer. [0003] Silicon source materials are relatively active, especially trichlorosilane and dichlorosilane, which are easy to react with water to generate hydrochloric acid, silanol, siloxane and other substances. Substances such as hydrochloric acid are doped in the silicon source material, causing pollution of the silicon source material. For example: hydrochloric acid can corrode iron containers, piping or valves and other supporting equipment for transporting silicon sour...

Claims

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Application Information

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IPC IPC(8): G01N33/2022G01N33/2028G01N33/00G01N1/22C23C16/455C23C16/24
CPCC23C16/24C23C16/455G01N1/2226G01N33/00G01N2001/2229G01N33/2022G01N33/2028
Inventor 王力方圭哲金柱炫
Owner XIAN ESWIN MATERIAL TECH CO LTD
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