Reconfigurable field effect transistor with structure of asymmetric sidewalls and vertically stacked channels
A technology of field effect transistors and vertical stacking, which is applied in the direction of transistors, semiconductor devices, electrical components, etc., and can solve the problems of low on-state drive current, shortened transistor switching time, and high process development costs.
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[0028] The present invention will be described in detail below with reference to the drawings and embodiments.
[0029] Refer to Figure 1-4 The reconfigurable field effect transistor with the asymmetric sidewall and vertically stacked channel structure is characterized in that the sidewall 7 on the source side between the source 3 and the control gate 5 and the drain 4 and the electrode The material used for the drain side wall 8 between the linear gates 6 is different. The length of the source side wall 7 is less than or equal to the length of the drain side wall 8; the stacking feature prevents the channel 1 from being The stacking is perpendicular to the direction of the substrate 10, and the number of stacking is greater than or equal to two.
[0030] A reconfigurable field effect transistor with an asymmetric sidewall and a vertically stacked channel structure. The structural feature includes a plurality of vertically stacked channels 1, and a gate oxide 2 respectively wrapp...
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