A C-band semiconductor laser based on all four groups of silicon

Abstract

An all-four-group silicon-based C-band semiconductor laser, including a silicon substrate, on which a side negative electrode and an N-type doped silicon body material region forming an external negative power supply introduction port are arranged side by side. Three layers of Ge / Si quantum wells are arranged on the N-type doped silicon body material region, and a ridge waveguide structure is arranged on the three layers of Ge / Si quantum wells, and the connected positive positive The upper positive electrode of the power inlet port. The all-four-group silicon-based C-band semiconductor laser of the invention solves the problem of incompatibility between light source and silicon-based CMOS technology in the field of silicon-based optoelectronic integration. The semiconductor laser light source composed of all four group elements can directly grow the light source on the silicon wafer, eliminating the traditional bonding light source step and reducing the difficulty and cost of optoelectronic integration. The all-four-group silicon-based C-band semiconductor laser of the invention can work at room temperature.

Description

technical field [0001] The present invention relates to a semiconductor laser. In particular, it relates to an all-four-group silicon-based C-band semiconductor laser. Background technique [0002] With the continuous development of information technology in modern society, people's performance requirements for communication lines are also increasing day by day. Silicon-based optical interconnection technology has attracted widespread attention because of its advantages such as low delay time, low heat dissipation power, high bandwidth, and high-speed read rate compared with traditional electrical interconnection methods. At present, in addition to silicon-based light sources, other silicon-based optoelectronic devices (such as silicon-based optical waveguides, silicon-based gratings, silicon-based modulators, silicon-based demodulators, and silicon-based photodetectors) have been realized, and the realization can be compared with Silicon-based light sources compatible wit...

AI Technical Summary

Problems solved by technology

Group IV semiconductor materials without material modification are indirect bandgap semiconductor materials, and their luminous efficiency is very low when they act on the active region of semiconductor lasers, which cannot meet the requirements of communication light sources

At present, the research on group four semiconductors is still in the research of material modification, and a complete set of design schemes for all group four silicon-based semiconductor lasers has not been provided, nor has it been optimized from the perspective of device structure to improve the working efficiency of the device. and stability

Images