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Dielectric adjustable ceramic material and preparation method thereof

A ceramic material and dielectric technology, applied in the field of dielectric tunable ceramic materials and their preparation, can solve problems such as practical obstacles, unsuitability for developing dielectric tunable materials, and rising dielectric loss.

Inactive Publication Date: 2019-11-12
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, ferroelectric materials have a large hysteresis linearity, and the difference in dielectric constant under the same electric field during the electric field rise and fall is often very large, which brings great obstacles to practical use; at the same time, the ferroelectric phase transition peak is very sharp, and materials near it The sharp drop in temperature and temperature, coupled with the increase in dielectric loss during the domain state response process, all bring challenges to the application
Therefore, purely ferroelectric materials are also not suitable for the development of dielectrically tunable materials

Method used

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  • Dielectric adjustable ceramic material and preparation method thereof
  • Dielectric adjustable ceramic material and preparation method thereof
  • Dielectric adjustable ceramic material and preparation method thereof

Examples

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preparation example Construction

[0033] A method for preparing dielectrically adjustable ceramic materials, using a solid-state sintering process to prepare Ti-modified BaHfO 3 A perovskite type dielectric ceramic material, comprising the following steps:

[0034] Step 1. Weigh the required raw material BaCO according to the stoichiometric ratio 3 、TiO 2 and HfO 2 , and BaCO 3 、TiO 2 and HfO 2 Fully mix and grind to submicron particle size to obtain raw materials;

[0035] Step 2. Pre-press the raw material obtained in step 1 in a mold with a pressure of 100MPa-500MPa to obtain intermediate A, and then place intermediate A in a high-temperature reaction furnace and raise the temperature to 800°C-1350°C for pre-sintering , to obtain sintered product B;

[0036] Step 3. Put the sintered product B obtained in step 2 into a mortar for secondary grinding into micron-sized powder, and add a binder such as PVA for granulation, and press into a mold with a pressure of 100MPa-800MPa for tablet molding shape, t...

Embodiment 1

[0039] A kind of preparation method of dielectric adjustable ceramic material, chemical composition is Ba(Hf 0.3 Ti 0.7 )O 3 , referred to as Hf30. Including the following steps:

[0040] Step 1: Press Ba(Hf 0.3 Ti 0.7 )O 3 The stoichiometric ratio of each element in Weigh the required raw material: BaCO 3 、TiO 2 and HfO 2 , fully mixed and ground to obtain the original material.

[0041] Step 2: pre-press the homogeneously mixed raw material obtained above in a mold with a pressure of 500 MPa, and then place it in a high-temperature reaction furnace and raise the temperature to 1350°C for pre-sintering;

[0042] Step 3: Put the product obtained by the above pre-sintering into a mortar and grind it into a micron-sized powder, then add the binder PVA for granulation, and press the granulated granules into a mold with a pressure of 800 MPa for tablet molding;

[0043] Step 4: Put the product obtained by the above tablet molding into a high-temperature reaction furnace,...

Embodiment 2

[0046] A kind of preparation method of dielectric adjustable ceramic material, chemical composition is Ba(Hf 0.4 Ti 0.6 )O 3 , referred to as Hf40. Including the following steps:

[0047] Step 1: Press Ba(Hf 0.4 Ti 0.6 )O 3 The stoichiometric ratio of each element in Weigh the required raw material: BaCO 3 、TiO 2 and HfO 2 , fully mixed and ground to obtain the original material.

[0048] Step 2: pre-press the uniformly mixed raw materials obtained above in a mold with a pressure of 100 MPa to obtain intermediate A1, and then place intermediate A1 in a high-temperature reaction furnace and raise the temperature to 800°C for pre-sintering;

[0049] Step 3: Put the above-mentioned pre-sintered product into a micron-sized powder for the second time in a mortar, add the binder PVA for granulation, and perform tablet molding with a pressure of 100 MPa in the mold;

[0050] Step 4: Put the product obtained by the above-mentioned tablet molding into a high-temperature react...

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Abstract

The invention discloses a dielectric adjustable ceramic material and a preparation method thereof. The method includes weighing required raw materials according to a stoichiometric ratio and uniformlymixing and grinding the materials to a smaller particle size to obtain a raw material; performing sheet pre-pressing; then performing pre-sintering in a high-temperature reaction furnace; subjectinga sample obtained by pre-sintering to secondary grinding in a mortar to obtain powder having a proper particle size; adding an adhesive and performing granulation; putting a sample obtained after sheet pressing and shaping again into the high-temperature reaction furnace; firstly heating the sample to 500 DEG C, maintaining the temperature for 30 min, and then performing adhesive discharging; thenheating the sample to a target sintering temperature that is 1200-1700 DEG C, and maintaining the temperature for 60-300 min; and finally performing furnace cooling to room temperature to obtain a target ceramic sample. The ceramic has a crystal phase structure that is a pure perovskite phase, and has excellent dielectric adjustability. Ultra-wide-range reversible adjustment of the dielectric constant from 700 to 2400 can be achieved through component adjusting, the tuning rate can be 60% or above when the bias field is 30 kV / cm, the dielectric loss can be as low as 0.007, and the K factor can reach 80.

Description

technical field [0001] The invention belongs to the technical field of dielectric materials, and in particular relates to a dielectrically adjustable ceramic material and a preparation method thereof. Background technique [0002] With the development of integration and miniaturization of electronic devices, tunable dielectric materials have received more and more attention and research and development due to their huge application potential in tunable filters, phase shifters, antennas and other devices. Device applications require materials with high dielectric tunability, low dielectric loss and appropriate dielectric constant to ensure high tunability, high stability and high signal transmission efficiency of the application device. With (Ba,Sr)TiO 3 The representative perovskite material has been intensively studied due to its potential application in tunable microwave devices. However, the contradiction that it is difficult to obtain high dielectric tuning rate and low...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/468C04B35/622
CPCC04B35/468C04B35/622C04B2235/3215C04B2235/3232C04B2235/3244C04B2235/5436C04B2235/602C04B2235/656C04B2235/6567
Inventor 庄建穆罕穆德乌玛法如卡唐卓华
Owner XI AN JIAOTONG UNIV
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