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A method for evaluating the quality of high-purity silicon carbide powder

A technology of high-purity silicon carbide powder and high-purity silicon carbide, which is used in the analysis of materials, material analysis by optical means, instruments, etc., can solve the problem that the real quality of silicon carbide raw materials cannot be comprehensively reflected, the measurement cost is high, and the measurement period is long. problems, to achieve the effect of fast and effective test results, timely determination, and accelerated research and development progress

Active Publication Date: 2021-12-07
HEBEI POSHING ELECTRONICS TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the problems that the existing high-purity silicon carbide powder quality evaluation method cannot comprehensively reflect the true quality of silicon carbide raw materials, and the measurement cost is high and the measurement period is long, the present invention provides a high-purity silicon carbide powder quality evaluation method

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  • A method for evaluating the quality of high-purity silicon carbide powder
  • A method for evaluating the quality of high-purity silicon carbide powder
  • A method for evaluating the quality of high-purity silicon carbide powder

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Embodiment

[0024] In the actual application of synthetic silicon carbide powder, the powder in different parts of the same furnace and the powder in the same part of different furnaces are taken for measurement, and the quality coefficient is calculated according to the lightness and chromaticity values, and the quality control is carried out according to the quality factor , according to the change of quality coefficient, the process of synthetic powder should be adjusted appropriately.

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Abstract

The invention discloses a method for evaluating the quality of high-purity silicon carbide powder. The evaluation method includes the following steps: take high-purity silicon carbide powder, and use a colorimetric device to measure its lightness value L * and chroma value a * and b * ; the resulting L * value, a * value and b * Values ​​are substituted into the calculated figure of merit Δ. Based on the principle of spectroscopic colorimetry, and according to the difference in apparent color of silicon carbide powder caused by various impurities in high-purity silicon carbide powder, the present invention creatively constructs a calculation formula for the quality factor, which comprehensively reflects the silicon carbide powder The content of impurities such as N, Al and B in the silicon carbide and the content of carbon inclusions, and can semi-quantitatively analyze the level of nitrogen content in silicon carbide powder. The larger the quality factor, the better the quality of silicon carbide powder, a * The closer the value is to 0, the lower the nitrogen content. Adopt quality factor provided by the present invention and measured a * The value can quickly and effectively evaluate and classify the quality and nitrogen content of high-purity silicon carbide powder.

Description

technical field [0001] The invention relates to the technical field of silicon carbide inspection, in particular to a method for evaluating the quality of high-purity silicon carbide powder. Background technique [0002] As the most mature wide-bandgap semiconductor material, it is widely used in power electronics, radio frequency devices, optoelectronic devices and other fields. In particular, semi-insulating silicon carbide substrates are widely used in the field of microwave devices. The "semi-insulating" refers to the resistivity at room temperature greater than 10 5 Ω·cm. Transistors fabricated from semi-insulating silicon carbide are capable of generating more than five times the power density of GaAs microwave components at frequencies up to 10 GHz. Therefore, the manufacture of semi-insulating silicon carbide substrates with high crystalline quality can produce high-performance microwave devices, which can be used in communication devices such as cellular phones an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/31G01N21/01
CPCG01N21/01G01N21/31
Inventor 王建江王毅高卫李召永赵丽霞吴会旺陈秉克
Owner HEBEI POSHING ELECTRONICS TECH
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