Light-emitting diode epitaxial wafer, manufacturing method thereof, and chip manufacturing method

Abstract

The invention discloses a light-emitting diode epitaxial wafer, a manufacturing method thereof and a chip manufacturing method, which belong to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprises a substrate, a first buffer layer, a second buffer layer, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, which are sequentially stacked. The first buffer layer is the mixture of an Al elemental substance and an AlN compound. The Al elemental substance is mixed in the AlN compound such that the first buffer layer is gray or black.The second buffer layer is a pure substance of the AlN compound, so that the second buffer layer is white. According to the invention, the mixture of the Al elemental substance and the AlN compound isadded between the substrate and the original white AlN pure substance; the Al elemental substance is mixed in the AlN compound, and the whole is gray or black, which is favorable for absorbing laser;the substrate and the epitaxial wafer are separated; and then a vertically structured chip is produced.

Description

Technical field [0001] The invention relates to the field of semiconductor technology, in particular to a light-emitting diode epitaxial wafer, a manufacturing method thereof, and a method of manufacturing a chip. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, abbreviated as: LED) is a semiconductor diode that can convert electrical energy into light energy. Deep Ultra Violet (English: Deep Ultra Violet, abbreviated as: DUV) LED refers to an LED whose emission center wavelength is shorter than 290nm. Compared with low-pressure pump lamps, DUV LED has the advantages of no pump, small size, long life, low power consumption, etc., and has broad application prospects in the field of disinfection and sterilization. Moreover, with the entry into force of the "Minamata Convention", the production and use of pump lamps will cease before 2020, and the demand for DUV LEDs is imminent. [0003] The epitaxial wafer is the primary finished product in the LE...

AI Technical Summary

Problems solved by technology

Since the wavelength of the laser is generally 266nm, the photon energy can only reach 4.66eV, and the AlN used in the buffer layer of the DUV LED epitaxial wafer can reach 6.2eV, which is greater than the photon energy of the laser, so the laser is difficult to be epitaxy by the DUV LED. Absorbed by the buffer layer of the wafer, the substrate separation of the DUV LED epitaxial wafer cannot be achieved by laser lift-off technology, and the vertical structure of the DUV LED chip is manufactured.

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