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A low-power all-optical diode based on a silicon-based mems microring

An all-photodiode, low-power technology, used in optics, light guides, optical components, etc., can solve the problems of high power and low isolation, and achieve the effects of low power consumption, high isolation, and easy integration

Active Publication Date: 2020-12-08
CHINA UNIV OF GEOSCIENCES (WUHAN)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Although the above methods can realize optical diodes on silicon substrates, they all have the disadvantages of high power requirements and low isolation

Method used

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  • A low-power all-optical diode based on a silicon-based mems microring
  • A low-power all-optical diode based on a silicon-based mems microring
  • A low-power all-optical diode based on a silicon-based mems microring

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Embodiment Construction

[0023] In order to make the purpose, technical solution and advantages of the present invention clearer, the embodiments of the present invention will be further described below in conjunction with the accompanying drawings.

[0024] refer to figure 1 , the embodiment of the present invention provides a low-power all-optical diode based on a silicon-based MEMS microring, comprising: a silicon-based platform 1, a first microring 3, a second microring 4, a first waveguide 5, a second waveguide6.

[0025] The silicon-based platform 1 is made of silicon dioxide, which is cheap and easy to prepare, and is an important raw material for optical devices. The silicon-based platform made of silicon dioxide can reduce substrate loss and Loss due to substrate absorption. The shape of the silicon-based platform 1 is a flat cuboid, and its front surface has two equal and symmetrical grooves 2 parallel to the surface.

[0026] The first microring 3 and the second microring 4 are made of s...

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Abstract

The invention provides a low-power-consumption all-optical diode based on silicon-based MEMS micro-rings. The low-power-consumption all-optical diode comprises a silicon-based platform, a first micro-ring, a second micro-ring, a first waveguide and a second waveguide. The first waveguide is provided with a first port, and the second waveguide is provided with a second port. Two symmetrical grooveswith the same size are formed in the middle of the silicon-based platform; the two micro-rings have the same radius and are partially suspended beside the grooves, and different coupling efficienciesare realized through different distances between the micro-rings and the waveguide. In the all-optical diode, forward and reverse nonreciprocal transmission of an optical signal can be realized by utilizing a photodynamic effect in the MEMS micro-rings, and tuning of the MEMS micro-rings can be realized by inputting corresponding resonant optical power. The all-optical diode has the advantages ofbeing high in isolation degree and compact in size, being capable of achieving all-optical tuning, and having high application values in the fields of lasers, optical fiber communication systems andthe like.

Description

technical field [0001] The invention relates to the fields of optical communication and integrated optical devices, in particular to a low-power all-optical diode based on a silicon-based MEMS (micro-electromechanical system) microring. Background technique [0002] As a carrier with large communication width and fast information processing speed, optical information carrier is becoming the mainstream direction in the field of communication. An all-optical diode is an optical diode similar to a semiconductor PN junction in electricity. It is a very important device in an integrated optical system, which can realize the non-reciprocal transmission of light, that is, the one-way transmission of light. [0003] In order to realize this non-reciprocal optical device, researchers at home and abroad have proposed many methods, and optical isolators are a common solution. At present, there are three main methods to implement on-chip optical isolators based on silicon-based microri...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B6/27G02B6/293G02B6/35
CPCG02B6/2746G02B6/29338G02B6/3518G02B2006/12123G02B2006/12157
Inventor 刘力许灵欢陈苗苗
Owner CHINA UNIV OF GEOSCIENCES (WUHAN)
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