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Quartz crystal wafer machining technology

A processing technology, quartz wafer technology, applied in stone processing equipment, manufacturing tools, fine working devices, etc., can solve the problems of wasting production resources, increasing costs, uneven thickness of wafers, etc., and achieve the effect of increasing accuracy and saving costs

Inactive Publication Date: 2019-12-13
菲特晶(南京)电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The cutting and grinding of silicon ingots generally use a wire cutting machine to cut the ingot and use a plane grinder to grind the cut ingot. The original quartz wafer is vulnerable to impact, resulting in uneven thickness and large frequency differences. , wasting production resources and increasing costs

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] A quartz wafer processing technology includes the following steps:

[0025] S1. After polishing the silicon ingot, cut it into a wafer with a thickness of 0.25mm;

[0026] S2. Soak the cut wafer in a sodium hydroxide solution with a pH of 7 for 1 second and then remove it, rinse it with clean water 3 times, and dry it at 80°C;

[0027] S3. Soak the wafer in a hydrochloric acid solution with a pH of 4.5 for 60 seconds and then remove it, rinse it with clean water 3 times, and dry it at 80°C;

[0028] S4. Perform an initial frequency measurement on the dried wafers, and select wafers with similar frequencies;

[0029] S5. Coating two layers of material on the surface of the screened wafer;

[0030] S6. Fix and polish the wafer through glue and base glue connection;

[0031] S7. Soak the polished wafer in a hydrochloric acid solution with a pH of 4.5 for 60 seconds and then remove it, rinse it with clean water 3 times, and dry it at 80°C;

[0032] S8. Boil the wafers and dry them at 60...

Embodiment 2

[0035] A quartz wafer processing technology includes the following steps:

[0036] S1. After polishing the silicon ingot, cut it into a wafer with a thickness of 0.35mm;

[0037] S2. Soak the cut wafers in a sodium hydroxide solution with a pH of 8 for 2 seconds and then remove them, rinse them with clean water 3 times, and dry them at 85°C;

[0038] S3. Soak the wafer in a hydrochloric acid solution with a pH of 5.5 for 60 seconds and then remove it, rinse it with clean water 3 times, and dry it at 85°C;

[0039] S4. Perform an initial frequency measurement on the dried wafers, and select wafers with similar frequencies;

[0040] S5. Coating two layers of material on the surface of the screened wafer;

[0041] S6. Fix and polish the wafer through glue and base glue connection;

[0042] S7. Soak the polished wafer in a hydrochloric acid solution with a pH of 6 for 60 seconds and then remove it, rinse it with clean water 3 times, and dry it at 85°C;

[0043] S8. Boil the wafers and dry them...

Embodiment 3

[0046] A quartz wafer processing technology includes the following steps:

[0047] S1. After polishing the silicon ingot, cut it into a wafer with a thickness of 0.45mm;

[0048] S2. Soak the cut wafer in a sodium hydroxide solution with a pH of 9 for 3 seconds and then remove it, rinse it with clean water 3 times, and dry it at 90°C;

[0049] S3. Soak the wafer in a hydrochloric acid solution with a pH of 6 for 60 seconds and then remove it, wash it with clean water 3 times, and dry it at 90°C;

[0050] S4. Perform an initial frequency measurement on the dried wafers, and select wafers with similar frequencies;

[0051] S5. Coating two layers of material on the surface of the screened wafer;

[0052] S6. Fix and polish the wafer through glue and base glue connection;

[0053] S7. Soak the polished wafer in a hydrochloric acid solution with a pH of 5.5 for 60 seconds and then remove it, rinse it with clean water 3 times, and dry it at 90°C;

[0054] S8. Boil the wafers and dry them at 70℃;...

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Abstract

The invention provides a quartz crystal wafer machining technology, and relates to the technical field of electronic element machining technologies. The quartz crystal wafer machining technology comprises the following steps that after being polished, a quartz crystal bar is cut into wafers which are 0.25-0.45 thick; the wafers obtained after cutting are soaked into a sodium hydroxide solution ofwhich the pH value is 7-9 for 1-3 s, and then, the wafers are taken out from the solution, washed with clean water 3 times and dried at the temperature of 80-90 DEG C; the wafers are soaked into a hydrochloric acid solution of which the pH value is 4.5-6 for 60 s, and then, the wafers are taken out from the solution, washed with clean water 3 times and dried at the temperature of 80-90 DEG C; thedried wafers are subjected primary frequency measurement, and the wafers of which the frequencies are similar are selected out; the surface of each selected wafer is coated with two layers of protection materials; the wafers are connected and fixed to a base through glue and are polished; the polished wafers are soaked into a hydrochloric acid solution of which the pH value is 4.5-6 for 60 s, andthen, the polished wafers are taken out from the solution, washed with clean water 3 times and dried at the temperature of 80-90 DEG C; the wafers are boiled to be separated and dried at the temperature of 60-70 DEG C; and the dried wafers are subjected to secondary frequency measurement, and the wafers of which the frequencies are similar are selected out and subjected to nitrogen sealing. According to the quartz crystal wafer machining technology, the precision is high, and the cost can be reduced.

Description

Technical field [0001] The invention belongs to the field of electronic component processing technology, and specifically relates to a quartz wafer processing technology. Background technique [0002] The chemical composition of quartz crystal is SiO 2 The crystal belongs to the oxide mineral of the trigonal crystal system, namely low-temperature quartz (a-quartz), which is the most widely distributed mineral species in the quartz group minerals. For the cutting and grinding of silicon ingots, wire cutting machines are generally used to cut the ingots and plane grinders are used to grind the cut ingots. The original quartz wafers are susceptible to impact, resulting in uneven wafer thickness and large frequency differences. , Waste production resources and increase costs. [0003] Therefore, there is an urgent need to provide a quartz wafer processing technology with high accuracy and cost saving. Summary of the invention [0004] The purpose of the present invention is to provide...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B1/00B28D5/00B08B3/08
CPCB08B3/08B24B1/00B28D5/00
Inventor 郑嵩
Owner 菲特晶(南京)电子有限公司