Transistor and manufacturing method thereof

Abstract

The invention discloses a transistor and a manufacturing method thereof. The manufacturing method for the transistor comprises the following steps: carbon nanotubes are formed on a substrate; a gate stack structure is formed on the carbon nanotubes; and electric contact is formed on the carbon nanotubes. The step of forming electric contact comprises sub steps: a conductive material grows on the surface of the carbon nanotubes by adopting an electroplating process, and in the electroplating process, the gate stack structure is used as a mask. According to the manufacturing method, the gate stack structure is used as the mask, the electroplating process is adopted to selectively grow the conductive material in a source-drain region on the surface of the carbon nanotubes from bottom to top to form electric contact, and meanwhile, the problems of holes generated when source-drain metal is deposited by deposition means such as sputtering and evaporation and the problem of side wall deposition of the source-drain metal in the prior art are solved.

Description

technical field [0001] The present disclosure relates to the field of manufacturing semiconductor integrated circuit devices, and more particularly, to a transistor and a manufacturing method thereof. Background technique [0002] Carbon nanotube (Carbon Nanotube, CNT) has the advantages of high speed and low power consumption, and is considered to be one of the best channel materials for constructing field effect transistors in the future. [0003] In the prior art, when making carbon nanotube transistors, for example, sputtering and vapor deposition are used to deposit source and drain metals on the surface of carbon nanotubes from top to bottom. During the deposition process, due to the secondary sputtering effect, the contact electrode area cannot be perfectly filled, resulting in holes that affect device performance. [0004] When the source-drain metal is deposited by a self-aligned process, the deposition process inevitably occurs simultaneously on the source-drain r...

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Problems solved by technology

[0007] In view of this, the present invention provides a transistor and its manufacturing method, which is formed by using the gate stack structure as a mask and using an electroplating process to selectively grow conductive materials in the source and drain regions on the surface of carbon nanotubes from bottom to top Electrical contact, while solving the problems of holes, sidewall deposition of source and drain metals, and excessive space occupied by devices

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