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High growth rate deposition for group iii/v materials

A technology of deposition temperature and deposition rate, which is applied in the field of epitaxial growth of III/V materials, which can solve the problems of reducing the quality of epitaxial materials and increasing the deposition rate.

Pending Publication Date: 2019-12-17
尤蒂卡黎赛科有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The quality of the epitaxial material is usually greatly reduced with a small increase in the deposition rate

Method used

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  • High growth rate deposition for group iii/v materials
  • High growth rate deposition for group iii/v materials
  • High growth rate deposition for group iii/v materials

Examples

Experimental program
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Effect test

Embodiment 1

[0045] Example 1 - GaAs: In one example, a deposition gas can be formed by combining a gallium precursor (eg, TMG) ​​and an arsenic precursor (eg, arsine). The substrate can be heated to deposition temperature and exposed to deposition gases. The deposition temperature can have a wide range. In one example, the deposition temperature may range from about 600°C to about 800°C, such as from about 650°C to about 750°C or from about 650°C to about 720°C. In one example, the deposition gas may contain about 2000 cc of hydrogen (H 2 ) about 100cc of arsine and about 200cc of TMG / H 2 mixture (in H 2 about 10% of TMG). The group III / V material comprises gallium and arsenic and can be deposited at a rate of about 30 μm / hour or higher, such as about 40 μm / hour or higher, preferably about 50 μm / hour or higher, preferably about 55 μm / hour or higher, And more preferably, about 60 μm / hour or higher. In one example, a deposition rate greater than about 60 μm / hour may include a depositi...

Embodiment 2

[0046] Example 2 - GaAlAs: In another example, a deposition gas may be formed by combining a gallium precursor (eg, TMG), an aluminum precursor (eg, TMA), and an arsenic precursor (eg, arsine). The substrate can be heated to deposition temperature and exposed to deposition gases. The deposition temperature can have a wide range. In one example, the deposition temperature may range from about 600°C to about 800°C. In one example, the deposition gas may contain: about 100 cc of arsine in about 2000 cc of hydrogen; about 200 cc of TMG / H 2 mixture (in H 2 about 10% of TMG); and about 200cc of TMA / H 2 (at H 2 in about 1% of TMA). Group III / V materials comprise gallium, aluminum and arsenic and can be deposited at a rate of about 30 μm / hour or higher, such as about 40 μm / hour or higher, preferably about 50 μm / hour or higher, preferably about 55 μm / hour or more High, more preferably, about 60 μm / hour or higher. In one example, a deposition rate greater than about 60 μm / hour ma...

Embodiment 3

[0047] Example 3 - AlGaInP: In another example, the deposition gas can be obtained by combining a gallium precursor (eg, TMG), an aluminum precursor (eg, TMA), an indium precursor (eg, trimethylindium-TMI), and phosphorous Precursors (e.g., phosphine-PH 3 ) to form. The substrate can be heated to deposition temperature and exposed to deposition gases. The deposition temperature can have a wide range. In one example, the deposition temperature may range from about 600°C to about 800°C. In one example, the deposition gas may contain: about 200 cc of TMG / H 2 mixture (in H 2 About 10% of TMG in the middle); about 200cc of TMA / H 2 (at H 2 about 1% TMA in the medium); about 200cc of TMI / H 2 (at H 2 about 1% TMI in about 2000 cc of hydrogen); and about 100 cc of phosphine in about 2000 cc of hydrogen. Group III / V materials comprise gallium, aluminum, indium and phosphorus and can be deposited at a rate of about 30 μm / hour or higher, such as about 40 μm / hour or higher, prefer...

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Abstract

Aspects of the disclosure relate to processes for epitaxial growth of Group III / V materials at high rates, such as about 30 [mu]m / hr or greater, for example, about 40 [mu]m / hr, about 50 [mu]m / hr, about 55 [mu]m / hr, about 60 [mu]m / hr, about 70 [mu]m / hr, about 80 [mu]m / hr, and about 90-120 [mu]m / hr deposition rates. The Group III / V materials or films may be utilized in solar, semiconductor, or otherelectronic device applications. The Group III / V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a vapor deposition process. Subsequently, theGroup III / V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III / V materials are thin films of epitaxially grown layers containing gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, gallium indium arsenide nitride, gallium aluminum indium phosphide, phosphides thereof, nitrides thereof, derivatives thereof, alloys thereof,or combinations thereof.

Description

[0001] Cross References to Related Applications [0002] This patent application claims priority to U.S. Nonprovisional Application No. 15 / 717,694, filed September 27, 2017, entitled "HIGH GROWTH RATE DEPOSITION FOR GROUP III / V MATERIALS," the entire contents of which are hereby incorporated by reference. U.S. Application No. 15 / 717,694 is a continuation-in-part of nonprovisional patent application Serial No. 12 / 904,0906 filed October 13, 2010, which requires a provisional filed October 14, 2009 under 35USC119(e) Interest in Patent Application Serial No. 61 / 251,677. Each of these applications is hereby incorporated by reference in its entirety. technical field [0003] Embodiments of the present disclosure relate generally to processes for depositing materials for solar, semiconductor or other electronic device applications, and more particularly to epitaxial growth of III / V materials. Background technique [0004] Group III / V materials, such as gallium arsenide or gallium...

Claims

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Application Information

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IPC IPC(8): H01L21/20H01L31/18
CPCH01L21/02538H01L21/0254H01L21/02543H01L21/02546H01L21/0262H01L21/02573C23C16/301C23C16/52
Inventor 洛里·D·华盛顿大卫·P·布尔格雷格·海格什何甘
Owner 尤蒂卡黎赛科有限责任公司
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