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Electric breakdown life testing method, device and system of TSV structure and control equipment

A technology of life testing and electrical breakdown, which is applied in semiconductor/solid-state device testing/measurement, circuits, electrical components, etc., can solve problems such as the inability to efficiently and accurately test the electrical breakdown reliability of TSV structures, and achieve efficient and accurate life performance , Efficient and accurate test results

Active Publication Date: 2019-12-20
CHINA ELECTRONICS PROD RELIABILITY & ENVIRONMENTAL TESTING RES INST
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  • Claims
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Problems solved by technology

[0004] Based on this, it is necessary to provide a TSV structure electrical breakdown life testing method, device, system and control equipment for the problem that the traditional technology cannot efficiently and accurately test the electrical breakdown reliability of the TSV structure

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  • Electric breakdown life testing method, device and system of TSV structure and control equipment
  • Electric breakdown life testing method, device and system of TSV structure and control equipment
  • Electric breakdown life testing method, device and system of TSV structure and control equipment

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Embodiment Construction

[0034] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. A preferred embodiment of the application is shown in the drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of this application more thorough and comprehensive.

[0035] It should be noted that when an element is considered to be "connected" to another element, it may be directly connected to and integrally integrated with the other element, or there may be an intervening element at the same time.

[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in th...

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Abstract

The invention relates to an electric breakdown life testing method, device and system of a TSV structure and control equipment. The method comprises the following steps of acquiring an initial leakagecurrent of a to-be-tested TSV matrix wafer sample under an initial voltage through signal acquisition equipment in a first temperature cycle period, wherein the first temperature cycle period is a first period of controlling temperature adjusting equipment to adjust the test environment temperature of the to-be-tested TSV matrix wafer sample to be changed cyclically; when the initial leakage current is lower than or equal to a preset value, controlling power supply equipment to gradually increase a voltage applied to the to-be-tested TSV matrix wafer sample by taking the initial voltage as astarting point, and acquiring a current leakage current of the to-be-tested TSV matrix wafer sample in real time through the signal acquisition equipment; and when the current leakage current meets failure criteria, obtaining a total voltage adjusting duration of the power supply equipment, and confirming the total duration as the failure time of the to-be-tested TSV matrix wafer sample. The service life performance of the TSV structure is efficiently and accurately tested, and the electric breakdown reliability of the TSV structure is efficiently and accurately tested.

Description

technical field [0001] The present application relates to the technical field of wafer performance testing, in particular to a TSV structure electrical breakdown life testing method, device, system and control equipment. Background technique [0002] The new three-dimensional integration method based on TSV (Through silicon via) technology has higher integration density and higher performance, and is the cutting-edge application direction of advanced packaging at home and abroad. TSV three-dimensional integration technology is supported by through-silicon via interconnection and chip stacking technology, and realizes vertical integration and data transmission between homogeneous or heterogeneous chips through TSV vertical interconnection. TSV vertical interconnection breaks through the technical bottleneck of planar integration in terms of data transmission and functional density, greatly improves device information processing speed, and greatly reduces system volume, weight...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
CPCH01L22/14H01L22/20H01L22/26
Inventor 陈思王之哲周斌付兴尧彬黄云恩云飞
Owner CHINA ELECTRONICS PROD RELIABILITY & ENVIRONMENTAL TESTING RES INST
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