Preparation method of ultrahigh-quality SOI-based bonded Ge film

A bonding and thin-film technology, applied in the field of preparation of ultra-high-quality SOI-based bonded Ge thin films, can solve problems such as high-density threading dislocations and poor crystal quality

Active Publication Date: 2020-01-07
MINNAN NORMAL UNIV +1
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Problems solved by technology

[0005] Aiming at the problems of high-density threading dislocations and poor crystal quality in SOI-based Ge thin films prepared by traditional epitaxial techniques, the present invention provides a method for preparing ultra-high-quality SOI-based Ge thin films, which uses low-temperature a- Ge interlayer bonding technology realizes Ge / SOI bonding, and uses chemical etching method combined with chemical mechanical polishing process to thin the bonded Ge sheet to 1 μm, so as to realize the preparation of high-quality SOI-based Ge film

Method used

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  • Preparation method of ultrahigh-quality SOI-based bonded Ge film
  • Preparation method of ultrahigh-quality SOI-based bonded Ge film

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Embodiment

[0025] 1. Surface treatment of SOI sheet and Ge sheet

[0026] 1) The SOI sheet and the Ge sheet were ultrasonically cleaned with acetone, ethanol, and deionized water for 10-15 min, respectively, to remove particles and organic matter attached to the surface of the substrate;

[0027] 2) Wash the SOI sheet after ultrasonic cleaning with H 2 SO 4 :H 2 o 2 =4:1 (v / v) solution was boiled for 10~15 min, rinsed with deionized water for 10~115 times, and then washed with HF:H 2 Soak in O=1:20 (v / v) solution for 2-4 minutes, rinse with deionized water for 10-15 times;

[0028] 3) Then the SOI sheet was coated with NH 4 OH:H 2 o 2 :H 2 The solution of O=1:1:4 (v / v / v) was boiled for 10-15 min, rinsed with deionized water for 10-15 times, and then washed with HF:H 2 Soak in O=1:20 (v / v) solution for 2-4 minutes, rinse with deionized water for 10-15 times;

[0029] 4) Finally, use HCl:H on the SOI sheet 2 o 2 :H 2 The solution of O=1:1:4 (v / v / v) was boiled for 10-15 minute...

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Abstract

The invention discloses a preparation method of an ultrahigh-quality SOI-based bonded Ge film. The method comprises steps of carrying out surface treatment of a Ge substrate and an SOI substrate; sputtering a layer of a-Ge film on each of the two substrates; laminating the Ge substrate and the SOI substrate in the atmosphere, putting the bonded Ge substrate and the SOI substrate into an annealingfurnace for low-temperature thermal annealing to realize high-strength Ge/SOI bonding, and thinning and polishing the bonded Ge substrate by adopting chemical corrosion combined with chemical mechanical polishing to obtain the ultrahigh-quality SOI-based bonded Ge film.

Description

technical field [0001] The invention relates to a method for preparing an ultra-high-quality SOI-based bonded Ge film, in particular to a new method for preparing an ultra-high-quality Si-based bonded Ge film by combining chemical corrosion and chemical mechanical polishing. Background technique [0002] In traditional semiconductor heterogeneous hybrid integration, traditional CVD and MBE techniques dominate the growth of thin film materials (Vivien, Laurent, et al. "Zero-bias 40 Gbit / s germanium waveguide photodetector on silicon." Optics express 20.2 (2012): 1096-1101; Yin, Tao, et al. "31GHz Ge nip waveguide photodetectors on Silicon-on-Insulatorsubstrate." Optics Express 15.21 (2007): 13965-13971.), using these two technologies combined to improve the epitaxial process [low and high temperature two Step growth method (Huang, Shihao, et al. "Depth-dependent etch pitdensity in Ge epilayer on Si substrate with a self-patterned Ge coalescence island template." Thin Solid Fi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/18H01L21/306
CPCH01L21/187H01L21/30604H01L21/30625
Inventor 柯少颖陈松岩黄东林周锦荣
Owner MINNAN NORMAL UNIV
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