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A method for preparing ultra-high quality SOI-based bonded GE thin films

A bonding and quality technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to solve problems such as high-density threading dislocations and poor crystal quality

Active Publication Date: 2022-05-03
MINNAN NORMAL UNIV +1
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Problems solved by technology

[0005] Aiming at the problems of high-density threading dislocations and poor crystal quality in SOI-based Ge thin films prepared by traditional epitaxial techniques, the present invention provides a method for preparing ultra-high-quality SOI-based Ge thin films, which uses low-temperature a- Ge interlayer bonding technology realizes Ge / SOI bonding, and uses chemical etching method combined with chemical mechanical polishing process to thin the bonded Ge sheet to 1 μm, so as to realize the preparation of high-quality SOI-based Ge film

Method used

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  • A method for preparing ultra-high quality SOI-based bonded GE thin films
  • A method for preparing ultra-high quality SOI-based bonded GE thin films

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Embodiment

[0025] 1. Surface treatment of SOI sheet and Ge sheet

[0026] 1) The SOI sheet and the Ge sheet were ultrasonically cleaned with acetone, ethanol, and deionized water for 10-15 min, respectively, to remove particles and organic matter attached to the surface of the substrate;

[0027] 2) Wash the SOI sheet after ultrasonic cleaning with H 2 SO 4 :H 2 o 2 =4:1 (v / v) solution was boiled for 10~15 min, rinsed with deionized water for 10~115 times, and then washed with HF:H 2 Soak in O=1:20 (v / v) solution for 2-4 minutes, rinse with deionized water for 10-15 times;

[0028] 3) Then the SOI sheet was coated with NH 4 OH:H 2 o 2 :H 2 The solution of O=1:1:4 (v / v / v) was boiled for 10-15 min, rinsed with deionized water for 10-15 times, and then washed with HF:H 2 Soak in O=1:20 (v / v) solution for 2-4 minutes, rinse with deionized water for 10-15 times;

[0029] 4) Finally, use HCl:H on the SOI sheet 2 o 2 :H 2 The solution of O=1:1:4 (v / v / v) was boiled for 10-15 minute...

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Abstract

The invention discloses a method for preparing an ultra-high-quality SOI-based bonded Ge thin film, which is to sputter a layer of a-Ge thin film on the Ge sheet and the SOI sheet after surface treatment, and then place the Ge sheet in the atmosphere. The two are bonded together, placed in an annealing furnace for low-temperature thermal annealing to achieve high-strength Ge / SOI bonding, and then chemical etching combined with chemical mechanical polishing is used to thin and polish the bonded Ge wafers to obtain ultra-high Quality SOI-based bonded Ge thin films.

Description

technical field [0001] The invention relates to a method for preparing an ultra-high-quality SOI-based bonded Ge film, in particular to a new method for preparing an ultra-high-quality Si-based bonded Ge film by combining chemical corrosion and chemical mechanical polishing. Background technique [0002] In traditional semiconductor heterogeneous hybrid integration, traditional CVD and MBE techniques dominate the growth of thin film materials (Vivien, Laurent, et al. "Zero-bias 40 Gbit / s germanium waveguide photodetector on silicon." Optics express 20.2 (2012): 1096-1101; Yin, Tao, et al. "31GHz Ge nip waveguide photodetectors on Silicon-on-Insulatorsubstrate." Optics Express 15.21 (2007): 13965-13971.), using these two technologies combined to improve the epitaxial process [low and high temperature two Step growth method (Huang, Shihao, et al. "Depth-dependent etch pitdensity in Ge epilayer on Si substrate with a self-patterned Ge coalescence island template." Thin Solid Fi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/18H01L21/306
CPCH01L21/187H01L21/30604H01L21/30625
Inventor 柯少颖陈松岩黄东林周锦荣
Owner MINNAN NORMAL UNIV
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