Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Sno with high nonlinearity, low residual voltage and large current capacity for power system transmission 2 The preparation method of varistor

A high nonlinear, varistor technology, applied in varistor, varistor core, resistor manufacturing, etc., can solve the problems of low residual voltage, single doping, poor electrical characteristics of varistor, etc. Improve the ability to bleed large current, enhance the nonlinear coefficient, and have the effect of strong aging stability

Active Publication Date: 2022-07-22
XINJIANG UNIVERSITY
View PDF13 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently SnO 2 The reasons for the poor electrical characteristics of varistors come from two aspects: First, in terms of formulation, according to the situation reported in the literature, the doping of elements with the same function in the formulation is too single, resulting in the grain boundary in the prepared sample. The formation effect is poor, making the prepared SnO 2 The electrical characteristics of varistors are relatively poor, and the present invention introduces binary donor doping at the same time, avoiding the defect of single donor element doping; two in terms of technology: currently about SnO 2 In the preparation process of pressure-sensitive ceramics, SnO is used in the abrasive stage 2 The main material and the auxiliary additives are ball milled together, so the problem is that they sink in the ball mill tank, while the fine material continues to be ball milled. After the powder prepared in this way is pressed and sintered, the result shown is The microstructure is disorganized and the number of pores is large
Therefore, SnO with high nonlinearity, low residual pressure and large flow capacity has not yet been produced. 2 Varistor Valve

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] 1) Preparation of powder raw materials

[0027] The SnO2 varistor ceramic material is SnO in the following proportions 2 : 69 copies, Co 3 O 4 : 7.5 parts, Cr 2 O 3 : 3.0 parts, Ni 2 O 3 : 2.5 parts, Sb 2 O 5 : 13 servings, Ta 2 O 5 : 5.0 servings of configuration starting material.

[0028] 2) Preparation of the required SnO 2 main slurry

[0029] The main powder SnO to be configured 2 : 69 parts were put into the polyethylene ball mill tank in the ball mill, and deionized water was added, wherein the ratio of material, ball and water was 1:1.5:1.5, and the mixed ball milled for 12h to obtain SnO 2 main slurry.

[0030] 3) Prepare the required auxiliary additive slurry

[0031] The auxiliary powder Co to be configured 3 O 4 : 7.5 parts, Cr 2 O 3 : 3.0 parts, Ni 2 O 3 : 2.5 parts, Sb 2 O 5 : 13 servings, Ta 2 O 5 : 5.0 parts are also put into the polyethylene ball mill tank in the ball mill, and deionized water is added, wherein the ratio of mat...

Embodiment 2

[0047] 1) Preparation of powder raw materials

[0048] The SnO 2 The pressure-sensitive ceramic material is SnO in the following proportions 2 : 66.85 parts, Co3O4: 8.25 parts, Cr 2 O 3 : 3.15 parts, Ni 2 O 3 : 3.0 parts, Sb 2 O 5 : 13.5 servings, Ta 2 O 5 : 5.25 servings of configuration starting material.

[0049] 2) Preparation of the required SnO 2 main slurry

[0050] The main powder SnO to be configured 2 : 66.85 parts were put into the polyethylene ball mill tank in the ball mill, and deionized water was added, wherein the ratio of material, ball and water was 1:1.5:1.5, and the mixed ball milled for 13.5h to obtain SnO 2 main slurry.

[0051] 3) Prepare the required auxiliary additive slurry

[0052] The auxiliary powder Co to be configured 3 O 4 : 8.25 parts, Cr 2 O 3 : 3.15 parts, Ni 2 O 3 : 3.0 parts, Sb 2 O 5 : 13.5 servings, Ta 2 O 5 : 5.25 parts are also put into the polyethylene ball mill tank in the ball mill, and deionized water is adde...

Embodiment 3

[0068] 1) Preparation of powder raw materials

[0069] The SnO2 varistor ceramic material is SnO in the following proportions 2 : 64.7 parts, Co 3 O 4 : 9.0 parts, Cr 2 O 3 : 3.3 parts, Ni 2 O 3 : 3.5 parts, Sb 2 O 5 : 14 servings, Ta 2 O 5 : 5.5 servings of configuration starting material.

[0070] 2) Preparation of the required SnO 2 main slurry

[0071] The main powder SnO to be configured 2 : 64.7 parts were put into the polyethylene ball mill tank in the ball mill, and deionized water was added, wherein the ratio of material, ball and water was 1:1.5:1.5, and the mixed ball milled for 15h to obtain SnO 2 main slurry.

[0072] 3) Prepare the required auxiliary additive slurry

[0073] The auxiliary powder Co to be configured 3 O 4 : 9.0 parts, Cr 2 O 3 : 3.3 parts, Ni 2 O 3 : 3.5 parts, Sb 2 O 5 : 14 servings, Ta 2 O 5 : 5.5 parts are also put into the polyethylene ball mill tank in the ball mill, and deionized water is added, wherein the ratio of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A kind of SnO with high nonlinearity, low residual voltage and large current capacity for power system transmission 2 The preparation method of the varistor, the composition of the varistor includes SnO 2 , Co 3 O 4 , Cr 2 O 3 , Ni 2 O 3 , Sb 2 O 5 , Ta 2 O 5 , whose preparation steps include SnO 2 The main slurry preparation steps, Co 3 O 4 , Cr 2 O 3 , Ni 2 O 3 , Sb 2 O 5 , Ta 2 O 5 The auxiliary slurry preparation step, the main slurry, the mixing step of the auxiliary slurry, the molding step, the degumming step, and the sintering step, the SnO 2 The main slurry preparation steps, Co 3 O 4 , Cr 2 O 3 , Ni 2 O 3 , Sb 2 O 5 , Ta 2 O 5 The auxiliary slurry preparation step, the main slurry, the mixing step of the auxiliary slurry, the molding step, the degumming step, and the sintering step are performed in sequence. Its beneficial effects are: increased SnO 2 The ability of the varistor to leak large currents achieves the purpose of enhancing its nonlinear coefficient and current capacity; the residual voltage ratio is suppressed to the lowest level, which is better than the results measured by a single doped Ta or Sb element , the aging stability is stronger.

Description

technical field [0001] The invention relates to the field of electrical materials, in particular to a SnO with high nonlinearity, low residual voltage and large current capacity for power system transmission. 2 A method of making a varistor. Background technique [0002] A varistor is an electronic component whose conductive properties change with the change of the applied voltage. When the voltage applied across the varistor is greater than the varistor's varistor voltage, the conductance of the varistor will increase infinitely. When the applied voltage is lower than the varistor voltage of the varistor, the varistor exhibits infinitely small conductance, which is quite in the disconnected state. This non-ohmic characteristic of a varistor is similar to that of two back-to-back Zener diodes, except that the varistor has no polarity. Not only that, the overvoltage that the varistor can withstand can range from a few volts to tens of thousands of volts, the impact current...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/457H01C7/108H01C17/30
CPCC04B35/457H01C7/108H01C17/30C04B2235/3277C04B2235/3241C04B2235/3279C04B2235/3294C04B2235/3251C04B2235/6562C04B2235/6567
Inventor 赵洪峰刘冬季谢清云程宽王锋蒙晓记燕飞霏
Owner XINJIANG UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products