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Miniaturized ultra-wideband power amplification module

A power amplifier module and power amplifier technology, applied in power amplifiers, etc., can solve the problems of large size, low efficiency, and low reliability, and achieve the effect of simple feed circuit, improved reliability, and increased reliability

Pending Publication Date: 2020-01-17
浙江嘉科电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the power amplifier modules in the prior art have the problems of large size, low efficiency and low reliability.

Method used

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  • Miniaturized ultra-wideband power amplification module
  • Miniaturized ultra-wideband power amplification module
  • Miniaturized ultra-wideband power amplification module

Examples

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Embodiment Construction

[0020] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0021] Such as figure 1 As shown, this embodiment discloses a miniaturized ultra-broadband power amplifier module, which is composed of a small signal amplifier 1, a GaAs power amplifier 2, and a GaN HEMT power amplifier 3 cascaded. 50 ohm impedance matching is used between each amplifier, which improves the reliability of the power amplifier.

[0022] Specifically, the small-signal power amplifier 1 is matched within 50 ohms of input and output, and can amplify all frequency signals in the 500-2700MHz frequency band, and output a signal of 18dBm; All frequency signals in the 2700MHz frequency band are amplified to output a signal of 33dBm; the GaN HEMT power amplifier 3 matches the input and output impedance to 50 ohms in the 500-2700MHz frequency band through load pulling, so that the GaN HEMT power amplifier 3 works in the 500-270...

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PUM

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Abstract

The invention provides a miniaturized ultra-wideband power amplification module, which comprises a small signal amplifier, a GaAs power amplifier and a GaN HEMT power amplifier which are in cascade connection in sequence, and the small signal amplifier, the GaAs power amplifier and the GaN HEMT power amplifier are all arranged on the same PCB. According to the invention, the small signal amplifierand the GaAs power amplifier are integrated on one PCB are matched in 50 Ohms; the feed circuit is simple, the overall size is reduced, the PCB and the silver-plated copper heat dissipation substrateare welded together through soldering tin, the grounding performance and the heat conduction performance are improved, and the reliability of the whole 500MHz-2700MHz ultra-wideband power 50W amplification module is improved.

Description

technical field [0001] The invention belongs to the technical field of power amplifiers, in particular to a miniaturized ultra-wideband power amplification module. Background technique [0002] The power amplifier module is a very commonly used device in electronic information technology. It is mainly used in some occasions that require ultra-wideband signal power amplification, and is typically used in some products in the field of signal transmission. Its performance affects the performance and operational reliability of instruments and equipment, and plays a very important role in electronic communication. However, the power amplifier module in the prior art has the problems of large volume, low efficiency and low reliability. Contents of the invention [0003] The object of the present invention is to provide a miniaturized ultra-wideband power amplification module to solve the above problems. [0004] To achieve the above object, the present invention adopts the fol...

Claims

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Application Information

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IPC IPC(8): H03F3/20
CPCH03F3/20
Inventor 顾汉清苏力晟潘强
Owner 浙江嘉科电子有限公司
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