Supercharge Your Innovation With Domain-Expert AI Agents!

a bahggese 4 Nonlinear optical crystal and its preparation method and application

A nonlinear optics and crystal technology, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve the problems of difficult crystal growth, affecting practical use, slow development of nonlinear crystals, etc.

Active Publication Date: 2021-06-08
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The development of nonlinear crystals in the infrared band is relatively slow; the materials in the infrared region are mostly ABC 2 Type chalcopyrite structure semiconductor materials, such as AgGaQ 2 (Q=S, Se) The photodamage threshold of infrared nonlinear crystal is too low and the crystal growth is difficult, which directly affects the practical use

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • a bahggese  <sub>4</sub> Nonlinear optical crystal and its preparation method and application
  • a bahggese  <sub>4</sub> Nonlinear optical crystal and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Example 1, BaHgGeSe was prepared by high temperature melt spontaneous crystallization method 4 Crystal:

[0041] Weigh 10.82 g BaSe, 13.98 g HgSe and 11.53 g GeSe 2 (i.e. BaSe:HgSe:GeSe 2 =0.05mol:0.05mol:0.05mol), after mixing evenly, put it into a quartz glass tube of Φ12mm×200mm, and evacuate to 10 -3 After that, it is packaged with an oxyhydrogen flame and placed in a tube growth furnace, slowly raised to 900°C, kept at a constant temperature for 72 hours, slowly cooled to room temperature at a rate of 1°C / h, and the tube growth furnace is closed; after the quartz tube is cooled Cut to get Φ12mm×60mm yellow BaHgGeSe 4 crystals.

Embodiment 2

[0042] Example 2, using the crucible drop method to prepare BaHgGeSe 4 Crystal:

[0043] Weigh 43.26 g BaSe, 55.92 g HgSe and 39.45 g GeSe 2 (Ba: Hg: Ge: Se = 0.2mol: 0.2mol: 0.2mol: 0.8mol), after mixing evenly, put it into a quartz glass tube of Φ25mm×200mm, and evacuate to 10 -3 After that, it is packaged with an oxygen-hydrogen flame and placed in a crystal growth furnace, and slowly raised to 950°C to melt the raw material. After the raw material is completely melted, the growth device drops vertically at a speed of 10mm / hour; after 5 days of crystal growth, the growth is completed , the growth device takes 50 hours to cool down to room temperature, and φ25×60mm yellow BaHgGeSe 4 Nonlinear Optical Crystals.

Embodiment 3

[0044] Example 3, BaHgGeSe was prepared by high-temperature melt spontaneous crystallization method 4 Crystal:

[0045] Weigh powdered BaHgGeSe 4 The compound is put into a Φ10mm×100mm quartz glass tube and vacuumed to 10 -3 After that, it is packaged with a hydrogen-oxygen flame and placed in a tubular growth furnace, slowly raised to 1000°C, kept at a constant temperature for 24 hours, slowly cooled to room temperature at a rate of 10°C / h, and the tubular growth furnace is closed; after the quartz tube is cooled Cut to get φ10×60mm yellow BaHgGeSe 4 Nonlinear Optical Crystals.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a BaHgGeSe 4 Nonlinear optical crystals and their preparation methods and applications; BaHgGeSe 4 Nonlinear optical crystals are grown by high temperature melt spontaneous crystallization method or crucible drop method; in this BaHgGeSe 4 In the growth of nonlinear optical crystals, the crystals have the advantages of fast growth, low cost, and easy access to larger-sized crystals; the obtained BaHgGeSe 4 Nonlinear optical crystals have large nonlinear optical effects (under the same conditions, AgGaS 2 2.2 times of ), wide light transmission band (0.55-18μm), high hardness, good mechanical properties, easy processing and other advantages; the BaHgGeSe 4 Nonlinear optical crystals can be used to make nonlinear optical devices.

Description

technical field [0001] The present invention relates to a kind of BaHgGeSe 4 The nonlinear optical crystal (BaHgGeSe 4 single crystal) and the BaHgGeSe 4 Single crystal preparation method and the BaHgGeSe 4 Use of single crystals for fabrication of nonlinear optical devices. Background technique [0002] Crystals with nonlinear optical effects are called nonlinear optical crystals. Here nonlinear optical effects refer to effects such as frequency doubling, sum frequency, difference frequency, and parametric amplification. Nonlinear optical effects are only possible in crystals that do not have a center of symmetry. Using the nonlinear optical effect of crystals, nonlinear optical devices such as second harmonic generators, up and down frequency converters, and optical parametric oscillators can be made. The laser generated by the laser can be frequency converted by nonlinear optical devices, so as to obtain more useful wavelengths of laser light, so that the laser can ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/46C30B11/02
CPCC30B29/46C30B11/02Y02P70/50
Inventor 姚吉勇郭扬武李壮罗晓宇
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More