Extreme ultraviolet mask and method of manufacturing the same

Abstract

An extreme ultraviolet mask includes an absorber having an index of refraction ranging from 0.87 to 1.02, an extinction coefficient ranging from 0.065 to 0.085, and a thickness ranging from 33.5 nm to43.5 nm. Another extreme ultraviolet mask includes an absorber having an index of refraction ranging from 0.87 to 1.02, an extinction coefficient ranging from 0.085 to 0.105, and a thickness rangingfrom 25.5 nm to 35.5 nm. Another extreme ultraviolet mask includes an absorber having an index of refraction ranging from 0.895 to 0.950, an extinction coefficient ranging from 0.0600 to 0.0610, and athickness ranging from 30 nm to 39 nm or 50 nm to 55 nm.

Description

technical field [0001] The disclosure relates to an extreme ultraviolet light mask and a manufacturing method thereof. Background technique [0002] With the demands of consumers, consumer electronic components are becoming thinner, thinner and smaller, and the size of each component of these components is bound to be reduced accordingly. Semiconductor devices are the main components of mobile phones, computer tablets and other devices, and the components located in them are also under pressure to reduce their size. With advances in semiconductor manufacturing techniques, such as lithography, reductions in component sizes have been achieved. [0003] For example, the wavelength of radiation used in lithography has been reduced, from ultraviolet to deep ultraviolet (DUV), and most recently extreme ultraviolet (EUV). Further reductions in device size require further improvements in lithography resolution, which can be achieved by extreme ultraviolet lithography (EUVL). EUVL...

AI Technical Summary

Problems solved by technology

[0004] As the semiconductor industry advances to nanotechnology process nodes in pursuit of higher component density, higher performance, and lower cost, there are challenges in reducing semiconductor feature size

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