Seven-cavity horizontal type HWCVD-PVD integrated equipment for manufacturing solar batteries

Abstract

The invention relates to seven-cavity horizontal type HWCVD-PVD integrated equipment for manufacturing solar batteries. A preheating feed cavity, an intrinsic amorphous silicon thin film deposition HWCVD cavity, a doped amorphous silicon thin film deposition HWCVD cavity, first, second and third TCO thin film deposition PVD cavities and a discharge cavity are connected sequentially through vacuumlocks, the head and the tail are provided with the vacuum locks, and a movable device connect all the cavities and the vacuum locks from front to back in a penetrating mode. A horizontal bearing plateis arranged in the preheating feed cavity, is arranged on the movable device and is in a movable state from front to back in the integrated equipment. A sputtering target is arranged in the second TCO thin film deposition PVD cavity. All the cavities are externally connected with a hyperpure gas channel, a heating system and a vacuum-pumping system. Procedures can be effectively prevented from being exposed to air in the product preparation process, performance of the crystalline silicon heterojunction solar batteries is promoted, and production cost is lowered.

Description

technical field [0001] The invention relates to the field of manufacturing high-efficiency crystalline silicon solar cells, in particular to a 7-cavity horizontal HWCVD-PVD integrated equipment for solar cell manufacturing. Background technique [0002] Currently, a class of advanced and efficient crystalline silicon solar cells is based on amorphous silicon / crystalline silicon heterojunction structures. The two key steps in its production technology are the deposition of amorphous silicon-based films (including intrinsic layers and doped layers, made of amorphous silicon, microcrystalline silicon, nano-silicon, oxygen-doped amorphous silicon, etc.) and transparent conductive Deposition of the oxide TCO layer. The more commonly used deposition methods for amorphous silicon-based thin films are low-temperature chemical vapor deposition methods, including plasma chemical vapor deposition (PECVD) and hot wire chemical vapor deposition (HWCVD); the TCO layer is generally prepar...

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Problems solved by technology

The overall system is very complex

Moreover, because the product must be exposed to the air during the transfer process between the CVD and PVD systems, the surface of the product is affected by water vapor, oxygen, dust, etc. in the air, resulting in performance degradation; the operating costs in production are high, and the number of workers required is relatively large. many

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