Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of copper zirconium aluminum ternary amorphous alloy thin film and preparation method thereof

An amorphous alloy thin film and aluminum ternary technology, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of high cost and high price of zirconium-copper-nickel ternary amorphous alloy film, and achieve Excellent practical application performance, low cost, uniform film effect

Active Publication Date: 2021-06-04
TONGJI UNIV
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Nickel is used as the main component in this patent, and the price of nickel is relatively high, resulting in an increase in the cost of the obtained zirconium-copper-nickel ternary amorphous alloy film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of copper zirconium aluminum ternary amorphous alloy thin film and preparation method thereof
  • A kind of copper zirconium aluminum ternary amorphous alloy thin film and preparation method thereof
  • A kind of copper zirconium aluminum ternary amorphous alloy thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The main components of the copper-based amorphous alloy film in this embodiment are Cu, Zr, and Al, and the percentage (at.%) contents of each element are: Cu 49, Zr 38, and Al 13, respectively.

[0034] Its preparation method is:

[0035] S1: Prepare the target: Melt the raw materials Cu, Zr, and Al elements in proportion to form a single alloy target, the target size is Ф60mm×3mm, and put the prepared alloy target into the sputtering target position;

[0036] S2: Substrate treatment: select monocrystalline silicon (10mm×10mm) as the substrate material, put the monocrystalline silicon into the ultrasonic cleaning equipment for deionized water cleaning for 10 minutes, take it out and clean it with alcohol, and then put it into the ultrasonic cleaning equipment again for cleaning with acetone for 10 minutes , take it out and clean it with deionized water and alcohol, and dry it with warm air after cleaning.

[0037] S3: Carry out magnetron sputtering: first evacuate, so...

Embodiment 2

[0040] The main components of the copper-based amorphous alloy film in this embodiment are Cu, Zr, and Al, and the percentage (at.%) contents of each element are: Cu 49, Zr 38, and Al 13, respectively.

[0041] Its preparation method is:

[0042] S1: Prepare the target: Melt the raw materials Cu, Zr, and Al elements in proportion to form a single alloy target, the target size is Ф60mm×3mm, and put the prepared alloy target into the sputtering target position;

[0043] S2: Substrate treatment: choose 304 stainless steel (10mm×10mm) as the substrate material, put the stainless steel into the ultrasonic cleaning equipment for deionized water to clean for 10 minutes, take it out and clean it with alcohol, then put it into the ultrasonic cleaning equipment again for cleaning with acetone for 10 minutes, after taking it out Clean with deionized water and alcohol, dry with warm air after cleaning, and use stainless steel as the substrate for sputtering.

[0044] S3: Carry out magnet...

Embodiment 3

[0047] The main components of the copper-based amorphous alloy film in this embodiment are Cu, Zr, and Al, and the percentage (at.%) contents of each element are: Cu 51, Zr 38, and Al 11, respectively.

[0048] Its preparation method is:

[0049] S1: Prepare the target: Melt the raw materials Cu, Zr, and Al elements in proportion to form a single alloy target, the target size is Ф60mm×3mm, and put the prepared alloy target into the sputtering target position;

[0050] S2: Substrate treatment: choose 304 stainless steel (10mm×10mm) as the substrate material, put the stainless steel into the ultrasonic cleaning equipment for deionized water to clean for 10 minutes, take it out and clean it with alcohol, then put it into the ultrasonic cleaning equipment again for cleaning with acetone for 10 minutes, after taking it out Clean with deionized water and alcohol, dry with warm air after cleaning, and use stainless steel as the substrate for sputtering.

[0051] S3: Carry out magnet...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a copper-zirconium-aluminum ternary amorphous alloy film and a preparation method thereof; the components and the atomic percentages of the components are respectively: 10.0-23.0 at.% Al, 33.0-38.0 at.% Zr, and The balance of Cu. The preparation method includes: preparing a single alloy target material; selecting the substrate material, flattening the substrate surface, then cleaning and drying it for use; performing magnetron sputtering preparation, wherein the vacuum degree is not less than 5×10 ‑4 Pa, the target base distance is 60mm, and the sputtering time is 30min. Compared with the prior art, the Cu-based amorphous alloy film in the present invention not only embodies good glass forming ability, but also has characteristics such as high hardness, Young's modulus and excellent corrosion resistance, and its preparation method It has strong operability and low manufacturing cost, and has important application and significance for the application and development prospect of the current thin film.

Description

technical field [0001] The invention belongs to the field of composition design and preparation of amorphous alloy thin films, and in particular relates to a copper-zirconium-aluminum ternary amorphous alloy thin film and a preparation method thereof. Background technique [0002] Due to the atomic structure characteristics of short-range order and long-range disorder, amorphous alloys exhibit many excellent physical, chemical and mechanical properties, and have broad potential application prospects in the industrial field. Compared with large-sized bulk amorphous alloys, amorphous alloy thin films are hardly affected by the critical glass size of the alloy, and large-sized amorphous alloy thin films can be obtained on the substrate material. This amorphous alloy thin film material still exhibits The excellent properties similar to those of bulk amorphous alloys are obtained, so amorphous alloy thin films have broad application prospects. Compared with other amorphous alloy...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/16C23C14/35C22C9/00C22C30/02C22C1/02C22C45/00
CPCC22C1/02C22C9/00C22C30/02C22C45/001C23C14/165C23C14/35
Inventor 魏先顺应承希严彪
Owner TONGJI UNIV
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com