Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Composition for hard mask

A kind of hard mask and composition technology, applied in the field of hard mask composition, can solve the problem of insufficient etching resistance characteristics and the like

Pending Publication Date: 2020-02-28
DONGWOO FINE CHEM CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is considered insufficient in improving the etch resistance characteristics

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Composition for hard mask
  • Composition for hard mask
  • Composition for hard mask

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0118] Synthesis Example 1 (Polymer A-1)

[0119] A 1L three-neck flask equipped with a thermometer, a condenser, a stirrer, and a dropping funnel is placed in an oil container, and 19.3 g (0.1 mol) of the compound represented by Chemical Formula 2-1 is added to the reactor and dissolved in 200 g of propylene glycol monomethyl Phenyl ether acetate (PGEMA). Thereafter, 0.19 g (0.002 mol) of sulfuric acid was added. A solution obtained by dissolving 13.8 g (0.1 mol) of the compound represented by Chemical Formula 3-1 in 100 g of PGMEA was filled in the dropping funnel, and the solution was added dropwise for 2 hours while maintaining the temperature inside the reactor at 120°C. After the dropwise addition, it was further stirred at the same temperature for 12 hours, then 0.45 g (0.003 mol) of triethanolamine as a neutralizing agent was added to the reactor and stirred at normal temperature for 1 hour, cooled to normal temperature to obtain The reaction mixture was added back d...

Synthetic example 2

[0122] Synthesis Example 2 (Polymer A-2)

[0123] Except having used 18.8 g (0.1 mol) of the compound represented by chemical formula 3-2 as an aryl alcohol derivative, the polymer represented by following chemical formula (A-2) was obtained by the method similar to the said synthesis example 1. The above polymer had a weight average molecular weight (Mw) of 1730 and a degree of dispersion (Mw / Mn) of 1.2.

[0124] [Chemical formula A-2]

[0125]

Synthetic example 3

[0126] Synthesis Example 3 (Polymer A-3)

[0127] The polymer represented by the following chemical formula (A-3) was obtained by the method similar to the said synthesis example 1 except having used 26.2 g (0.1 mol) of the compound represented by chemical formula 3-3 as an aryl alcohol derivative. The above polymer had a weight average molecular weight (Mw) of 1780 and a degree of dispersion (Mw / Mn) of 1.5.

[0128] [Chemical formula A-3]

[0129]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Dispersionaaaaaaaaaa
Login to View More

Abstract

The present invention provides a composition for a hard mask, and more particularly, to a composition for a hard mask, which can form a hard mask layer having excellent etching resistance, coating properties and chemical resistance by containing a solvent and a polymer containing a repeating unit represented by chemical formula 1. In the chemical formula 1, R1 represents a substituted or unsubstituted aryl group having 6 to 40 carbon atoms, a substituted or unsubstituted heteroaryl group having 6 to 40 carbon atoms, or a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms; R2 represents hydrogen, a hydroxyl group, a substituted or unsubstituted aryl group having 6-40 carbon atoms, or a substituted or unsubstituted heteroaryl group having 6-40 carbon atoms; R3 represents a substituted or unsubstituted arylene group having 6 to 40 carbon atoms or a substituted or unsubstituted heteroarylene group having 6 to 40 carbon atoms, and n represents an integer of 1 to 100. Chemical formula 1.

Description

technical field [0001] The present invention relates to a composition for a hard mask. Background technique [0002] In recent years, along with miniaturization and high integration design of electronic equipment, the development of more improved materials and related processes has been accelerated. Therefore, photolithography using conventional photoresists also requires new patterning materials and techniques. [0003] In general, a photoresist is coated on a film to be etched to form a photoresist layer, and a photoresist pattern is formed through exposure and development steps. By using the above photoresist pattern as A predetermined pattern can be formed by partially removing the film to be etched by etching the mask. [0004] In order to suppress a decrease in resolution due to light reflection in the exposure step, an anti-reflective coating (ARC) layer may be formed between the etching target film and the photoresist layer. In this case, since the etching of the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/11
CPCG03F7/11C08L65/00C08G61/124
Inventor 金烔永赵庸桓崔汉永
Owner DONGWOO FINE CHEM CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com