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Single crystal manufacturing method and apparatus, and single crystal silicon ingot

A single crystal manufacturing device and manufacturing method technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of poor yield and low improvement effect of resistivity distribution, and achieve the goal of improving manufacturing yield Effect

Active Publication Date: 2021-08-27
SUMCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] However, in the conventional manufacturing method described in Patent Document 1, the flow rate of the doping gas is adjusted in either the direction in which the resistivity continues to increase or the direction in which the resistivity continues to decrease over the entire length of the single crystal, so there are in-plane The problem that the improvement effect of the resistivity distribution is low
In addition, since the change direction of the gas doping amount is a single direction, the area where a wafer with a certain resistivity (for example, 50Ω±10%) can be obtained is limited to a very small part of the long side direction of the single crystal, and there is a problem in the yield rate. bad question

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  • Single crystal manufacturing method and apparatus, and single crystal silicon ingot
  • Single crystal manufacturing method and apparatus, and single crystal silicon ingot
  • Single crystal manufacturing method and apparatus, and single crystal silicon ingot

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Effect test

Embodiment

[0093]

[0094] When producing a silicon single crystal having a diameter of 200 mm by the gas doping method, a silicon single crystal according to a comparative example was prepared in which growth was performed while maintaining a constant flow rate of the doping gas without changing the flow rate of the doping gas. Wafers were cut out from this silicon single crystal, and the in-plane distribution of resistivity was measured. Figure 9 It is a graph showing the in-plane distribution of the resistivity of the wafer, the horizontal axis shows the distance (mm) from the center of the wafer, and the vertical axis shows the standard value (%) of the resistivity. The reference value (0%) of the resistivity is the target resistivity.

[0095] Such as Figure 9 As shown, the in-plane distribution of the resistivity of the single crystal silicon according to the comparative example is convex downward. In addition, the resistivity deviation ρdev was 11%. In addition, it was conf...

Embodiment 2

[0107] A silicon single crystal according to Example 2 was produced under the same conditions as in Example 1 except that the changing conditions of the dopant gas flow rate were different. Such as Figure 16 In this way, the doping gas flow waveform is a pulse wave, and the ratio of the crystal length d2 in the high-level interval to the crystal length d1 in the low-level interval is set to 4:75, taking the doping gas flow (a certain value) of the comparative example as a benchmark, It fluctuated between +312% and -14%. The dopant gas flow ratio was 4.8.

[0108] Next, the resistivity distribution of the side surface of the obtained silicon single crystal was measured along the crystal growth direction. The resistivity of the side surface of the silicon single crystal was measured by the four-terminal needle method. Figure 17 It is a graph showing the resistivity distribution of the side surface of the silicon single crystal according to Example 2, the horizontal axis sho...

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Abstract

The present invention provides a single crystal manufacturing method, a single crystal manufacturing device, and a single crystal silicon ingot based on the FZ method capable of improving the manufacturing yield of a single crystal having a desired resistivity and having a uniform in-plane distribution of the resistivity . The method for producing a single crystal according to the present invention is characterized in that the method is a method for producing a single crystal based on the FZ method in which the single crystal 3 is grown while spraying a dopant gas into the melting region 4 . A gas doping method in which the flow rate of the doping gas supplied to the melting region 4 is periodically increased or decreased.

Description

technical field [0001] The present invention relates to a single crystal manufacturing method and apparatus, and more particularly to a single crystal manufacturing method and single crystal manufacturing apparatus based on the FZ method (floating zone method) using a gas doping method. In addition, the present invention also relates to a silicon single crystal ingot produced by such a gas doping method. Background technique [0002] The FZ method is known as one of methods for growing a single crystal of silicon or the like. In the FZ method, a part of a polycrystalline raw material rod is heated to form a molten region, and the raw material rod and the single crystal located above and below the molten region are slowly pulled down to gradually grow the single crystal. In the FZ method, since a crucible for supporting the melt is not used, the quality of the silicon single crystal is not affected by the crucible, and a higher-purity single crystal can be grown compared to ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B13/12C30B29/06
CPCC30B13/12C30B29/06
Inventor 十河慎二杉田圭谦佐藤利行
Owner SUMCO CORP