Reaction furnace and cooling method

Abstract

The invention provides a reaction furnace and a cooling method. The reaction furnace comprises a furnace chamber, a graphite crucible arranged in the furnace chamber and an induction coil for heatingthe graphite crucible, wherein the furnace chamber comprises a chamber wall, a hollow space is arranged in the chamber wall, and the induction coil is arranged in the hollow space. According to the reaction furnace provided by the invention, the equipment power consumption can be reduced, so that the process cost can be reduced.

Description

technical field [0001] The invention relates to the technical field of reaction furnaces, in particular to a reaction furnace and a cooling method. Background technique [0002] The physical vapor transport (Physical Vapor Transport, hereinafter referred to as PVT) method is one of the mainstream methods for preparing silicon carbide crystals. The specific process of growing SiC single crystal by PVT method is usually to place the SiC crystal as the seed crystal on the top of the graphite crucible, and place the SiC powder as the material source on the bottom of the graphite crucible, and then use the induction coil to heat the graphite crucible, and the heating temperature reaches 2300 At the same time, the growth temperature gradient is controlled, and argon gas is introduced into the growth chamber to control the pressure of the growth chamber. During the crystal growth process, the material source sublimates and crystallizes on the seed crystal at the cold end, thereby ...

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Problems solved by technology

[0003] At present, the mainstream silicon carbide single crystal furnaces use induction heating to heat the graphite crucible. However, since the induction coil is located outside the quartz chamber and far away from the graphite crucible, there are problems of high power consumption and low heating efficiency.

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