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Pixel structure and manufacturing method thereof, image sensor

A technology of pixel structure and transfer tube, applied in the field of pixel structure and its manufacture, and image sensor, can solve the problems of reducing the fill factor of photodiode, it is difficult to determine the width of N buried layer, etc., so as to reduce the transfer time and reduce the image smear. Effect

Active Publication Date: 2022-06-21
BYD SEMICON CO LTD
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantage of this method is that the fill factor of the photodiode is reduced, and the magnitude of the lateral electric field is not linearly related to the width of the N-buried layer. It is difficult to determine the appropriate width of the N-buried layer to generate an electric field with a fixed direction.

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  • Pixel structure and manufacturing method thereof, image sensor
  • Pixel structure and manufacturing method thereof, image sensor
  • Pixel structure and manufacturing method thereof, image sensor

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Embodiment Construction

[0041] The specific embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present disclosure, but not to limit the present disclosure.

[0042] The present disclosure provides a pixel structure. figure 1 It is a schematic diagram of a cross-sectional structure of a pixel structure provided by an exemplary embodiment. figure 2 It is a schematic top-view structure diagram of a pixel structure provided by an exemplary embodiment. like figure 1 As shown, the pixel structure includes a photodiode, on which a gate oxide layer 19 and a transfer tube gate 13 (transfer tube gate polysilicon) are deposited last time, and on the gate oxide layer 19, the photodiode is close to the transfer tube gate Additional polysilicon 15 is also deposited on one side of 13 and electrodes are drawn from the additional polys...

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Abstract

The present disclosure relates to a pixel structure, a manufacturing method thereof, and an image sensor. The pixel structure includes a photodiode, on which a gate oxide layer (19) and a transmission tube gate (13) are sequentially deposited, on the gate oxide layer (19), the photodiode is close to the transmission tube Additional polysilicon (15) is also deposited on one side of the tube grid (13), and electrodes are drawn out from the additional polysilicon (15). In this way, when a high voltage is applied to the electrode, a capacitance can be parasiticly generated under the additional polysilicon in the photodiode. During exposure, electrons are preferentially stored in the capacitor, so that the transfer time of electrons is reduced, thereby reducing image smear.

Description

technical field [0001] The present disclosure relates to the field of semiconductor technology, and in particular, to a pixel structure, a method for manufacturing the same, and an image sensor. Background technique [0002] An image sensor is a semiconductor device that converts an optical image formed by an imaging lens into an electronic signal. Image smear is a phenomenon in which the residual image of the image sensor still appears in the next few frames after a sudden change in light intensity. In a Complementary Metal-Oxide-Semiconductor (CMOS) image sensor, if the charge transfer from the photodiode to the floating node is not completed within a frame, the charge will remain in the photodiode Exposure to the next frame may cause image smearing, which may result in image contamination and reduce image quality. Especially when shooting bright objects in low light conditions, the effect of this phenomenon on image quality is more obvious. [0003] In the related art,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/14603H01L27/14605H01L27/14643H01L27/14689
Inventor 谢勇郭先清刘坤
Owner BYD SEMICON CO LTD