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Chip photoresist and photoetching process

A photolithography process, a technology of negative photoresist, which is applied in the direction of photosensitive materials used for photomechanical equipment, photosensitive material processing, and photoplate-making process of patterned surface, etc. The problem of poor adhesion between resist and silicon wafer, etc., to achieve the effect of improving resolution

Pending Publication Date: 2020-03-24
江西省长益光电有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the process of integrated circuit preparation, most photoresists are hydrophobic, while the hydroxyl groups on the surface of silicon dioxide and the remaining water molecules are hydrophilic, which results in poor adhesion between the photoresist and the silicon wafer, and it is easy to It is difficult to guarantee the accuracy in the photolithography process, resulting in a decrease in resolution

Method used

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  • Chip photoresist and photoetching process

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] The invention provides a photoresist for a chip, including reagent A and reagent B, wherein the composition of reagent A is an ultraviolet negative photoresist, based on the total weight of solids in the liquid ultraviolet negative photoresist of reagent A, each group The component and its weight percentage are 75% of cyclized rubber, 15% of crosslinking agent, and xylene as solvent; reagent B is hexamethyldisilazane amine.

[0021] The viscosity of reagent A is 15-18 centipoise, and the viscosity of reagent B is 20-25 centipoise. Reagent B has a high viscosity and is in direct contact with the silicon wafer. Reagent A needs to be coated on reagent B. Therefore, the viscosity of reagent A must be suitable. If the viscosity is too high, it will not be easy to coat evenly. Resist effect, so the viscosity of the two can make the photoresist and silicon wafer bond well and improve the use effect.

[0022] Using the photoresist above to carry out a photolithography process ...

Embodiment 2

[0032] The invention provides a photoresist for integrated circuits, including reagent A and reagent B, wherein the composition of reagent A is ultraviolet negative photoresist, based on the total weight of solids in the liquid ultraviolet negative photoresist of reagent A, each The components and their weight percentages are 85% of cyclized rubber, 25% of crosslinking agent, and xylene as solvent; reagent B is trichlorophenyl silane.

[0033] The viscosity of reagent A is 18-20 centipoise, and the viscosity of reagent B is 25-30 centipoise. Reagent B has a high viscosity and is in direct contact with the silicon wafer. Reagent A needs to be coated on reagent B. Therefore, the viscosity of reagent A must be suitable. If the viscosity is too high, it will not be easy to coat evenly. Resist effect, so the viscosity of the two can make the photoresist and silicon wafer bond well and improve the use effect.

[0034] Using the photoresist above to carry out a photolithography proc...

Embodiment 3

[0044] The invention provides a photoresist for integrated circuits, including reagent A and reagent B, wherein the composition of reagent A is ultraviolet negative photoresist, based on the total weight of solids in the liquid ultraviolet negative photoresist of reagent A, each The components and their weight percentages are 80% of cyclized rubber, 20% of crosslinking agent, and xylene as solvent; reagent B is trichlorophenyl silane.

[0045] The viscosity of reagent A is 18-20 centipoise, and the viscosity of reagent B is 25-30 centipoise. Reagent B has a high viscosity and is in direct contact with the silicon wafer. Reagent A needs to be coated on reagent B. Therefore, the viscosity of reagent A must be suitable. If the viscosity is too high, it will not be easy to coat evenly. Resist effect, so the viscosity of the two can make the photoresist and silicon wafer bond well and improve the use effect.

[0046] Using the photoresist above to carry out a photolithography proc...

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Abstract

The present invention provides a chip photoresist, which comprises a reagent A and a reagent B. The reagent A comprises an ultraviolet negative photoresist, and comprises, by weight, 75-85% of cyclized rubber, 15-25% of a cross-linking agent, and xylene as a solvent based on the total weight of solids in the liquid ultraviolet negative photoresist of the reagent A; and the reagent B is hexamethyldisilazane or trichlorobenzene ester silane or a combination of hexamethyldisilazane and trichlorobenzene ester silane. The chip photoresist has the advantages and beneficial effects that the reagent Aand the reagent B are matched for use, the hydrophilicity of the surface of the silicon wafer is changed into hydrophobicity by utilizing hexamethyldisilazane or trichlorobenzene ester silane or thecombination of hexamethyldisilazane and trichlorobenzene ester silane of the reagent B, and meanwhile, the hydrophobic group of the reagent B can be well jointed with the reagent A, so that the reagent A is better adhered to the silicon wafer; the reagent A and the reagent B are matched and applied to the surface of the silicon wafer by adopting a certain process means, so that the resolution of the product can be effectively improved.

Description

technical field [0001] The invention relates to chemical materials for electronics and electricity, in particular to negative photoresist, and to photolithography technology. Background technique [0002] The role of photoresist in the field of microelectronics has a huge impact, and it is one of the key materials for micro-pattern processing in microelectronics technology. Especially in recent years, the development of large-scale and ultra-large-scale integrated circuits has greatly promoted the research and development of photoresist. and apply. However, in the process of integrated circuit preparation, most photoresists are hydrophobic, while the hydroxyl groups on the surface of silicon dioxide and the remaining water molecules are hydrophilic, which results in poor adhesion between the photoresist and the silicon wafer, and it is easy to As a result, it is difficult to guarantee the precision in the photolithography process, resulting in a decrease in resolution. Co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/038G03F7/16G03F7/40
CPCG03F7/038G03F7/004G03F7/16G03F7/168G03F7/40
Inventor 王锦平王杰
Owner 江西省长益光电有限公司