A vox gating tube with new structure and material

Abstract

The invention discloses a VOx gating tube with novel structure and material, which comprises a first metal electrode layer, a silver conductive medium layer, a chalcogenide material layer, a VOx material layer and a second metal electrode layer; A layer of chalcogenide material and a silver conductive medium layer are added between VOx and the bottom electrode, and the three together constitute the switching layer of the gate device, which can improve the switching performance of the gate. When a voltage or current is applied to the gating tube, silver diffuses into the chalcogenide material layer, which can form a conductive filament in the chalcogenide material, which makes the current flow only through the conductive filament and inhibits the current in other areas. The wire is very thin, which can locally heat the VOx material, so that part of the VOx material undergoes a transformation from a metallic state to an insulating state, thereby turning on the gate tube, which can significantly reduce the threshold voltage or threshold current of the gate tube, and increase the selectivity. The off-state resistance of the pass tube can significantly improve the switching ratio of the device and better suppress the leakage current of the device.

Description

technical field [0001] The invention belongs to the technical field of micro-nano electronics, and in particular relates to a VOx gating tube with a novel structure and material. Background technique [0002] Two-terminal nonvolatile memory uses two-terminal gate devices to suppress leakage current problems that are widespread in large-scale arrays. The gating tube device is a switching device, and its working principle is: before reaching the turn-on voltage / current, the gating tube is in the off state, and the resistance is very high, which can effectively suppress the leakage current; The extremely low resistance provides sufficient operating current for the corresponding memory cell. In a large-scale array, the gate is connected to the memory unit. When operating the memory unit, first apply voltage or current to open the gate connected to the selected unit, and then perform read and write operations on the selected memory unit. Wherein, the gate transistors connected ...

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Problems solved by technology

[0004] The advantage of this kind of gating tube is that it can provide a relatively large driving current, and the electrical stability of the device is relatively good, but its biggest disadvantage is that the leakage current of the device is usually relatively large and the switching ratio is small, and the V element and O The ratio of elements has a great influence on the performance of the VOx gate tube. Usually, in order to obtain a material with a suitable composition ratio, after the preparation of the VOx material layer, it needs to be annealed. The annealing temperature is generally around 500°C. The three-dimensional memory strictly requires that the device preparation temperature is lower than 400°C, otherwise the subsequent preparation process will destroy the previously prepared fine structure, which makes the preparation process of the VOx gate tube incompatible with it

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