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Preparation method of CdS/Si nano-film heterojunction

A nano-film, heterojunction technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve problems such as unfavorable industrialization, increase device cost, and high requirements for preparation parameters, and reduce production. Cost, size reduction, low value effect

Active Publication Date: 2020-04-07
PINGDINGSHAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Silicon thin films are usually obtained by plasma-enhanced chemical vapor deposition, rapid annealing crystallization, solid-phase crystallization, excimer laser crystallization, metal-induced crystallization, etc. However, these methods do not require too high a temperature for the substrate , that is, the requirements for the preparation parameters are too high, which greatly increases the cost of the device, which is not conducive to industrialization

Method used

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  • Preparation method of CdS/Si nano-film heterojunction
  • Preparation method of CdS/Si nano-film heterojunction
  • Preparation method of CdS/Si nano-film heterojunction

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Embodiment 1

[0040] Such as figure 1 As shown, the preparation method of the CdS / Si nano-film heterojunction of the present embodiment, the method first takes the ITO conductive film as the substrate, utilizes magnetron sputtering technology to deposit Si on the ITO conductive film, and prepares the nanostructure ITO / Si ; Then use magnetron sputtering technology to deposit CdS on nanostructure ITO / Si to prepare nanostructure ITO / Si / CdS; finally use magnetron sputtering technology to deposit Ag on nanostructure ITO / Si / CdS to prepare nanometer ITO / Si / CdS Si / CdS / Ag heterojunction. Specifically include the following steps:

[0041] Step S101, the ITO conductive film is fixed on the sample holder of the magnetron sputtering chamber, and the magnetron sputtering chamber is evacuated to 10 -6 Pa, then fill the magnetron sputtering chamber with argon to keep the vacuum of the magnetron sputtering chamber at 10 -1 Pa~50Pa;

[0042] Step S102, adjusting the distance between the Si target and the...

Embodiment 2

[0052] The preparation method of the CdS / Si nano-film heterojunction of the present embodiment comprises the following steps:

[0053] Step S201, the ITO conductive thin film is fixed on the sample holder of the magnetron sputtering chamber, and the magnetron sputtering chamber is evacuated to 10 -6 Pa, then fill the magnetron sputtering chamber with argon to keep the vacuum of the magnetron sputtering chamber at 1Pa;

[0054] Step S202, adjusting the distance between the Si target and the ITO conductive film to be 5cm, and setting the sputtering power to 60W;

[0055] Step S203, pre-sputtering for 60s, opening the baffle of the Si target, and starting sputtering for 10 minutes, depositing Si on the ITO conductive film with a thickness of about 1 μm to prepare nanostructured ITO / Si;

[0056] Step S204, after the sputtering time is up, turn off the sputtering power supply, turn on the heating power supply, heat the ITO / Si sample to 300°C for 30 minutes, and keep it under 1Pa p...

Embodiment 3

[0065] Step S301, the ITO conductive film is fixed on the sample holder of the magnetron sputtering chamber, and the magnetron sputtering chamber is evacuated to 10 -6 Pa, then fill the magnetron sputtering chamber with argon to keep the vacuum of the magnetron sputtering chamber at 1Pa;

[0066] Step S302, adjusting the distance between the Si target and the ITO conductive film to be 5cm, and setting the sputtering power to 60W;

[0067] Step S303, pre-sputtering for 60s, opening the baffle of the Si target, starting sputtering, sputtering for 20 minutes, depositing Si on the ITO conductive film with a thickness of about 2 μm, and preparing nanostructured ITO / Si;

[0068] Step S304, after the sputtering time is up, turn off the sputtering power supply, turn on the heating power supply, heat the ITO / Si sample to 300°C for 30 minutes, and keep it under 1Pa pressure for 50 minutes. The structure of the Si film is as follows Figure 7 As shown, its shape is as Figure 8 shown; ...

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Abstract

The invention belongs to the technical field of heterojunction preparation, and particularly relates to a preparation method of a CdS / Si nano-film heterojunction, which comprises the following steps of: by using an ITO conductive film as a substrate, depositing Si on the ITO conductive film by using a magnetron sputtering technology to prepare nano-structure ITO / Si, then depositing CdS on the nano-structure ITO / Si by using a magnetron sputtering technology to prepare nano-structure ITO / Si / CdS, and finally, depositing Ag on the nano-structure ITO / Si / CdS by using a magnetron sputtering technology to prepare a nano ITO / Si / CdS / Ag heterojunction. The method is simple and efficient, and the structure and the size of each component of the heterojunction are easy to regulate and control.

Description

technical field [0001] The invention belongs to the technical field of heterojunction preparation, in particular to a method for preparing a CdS / Si nano film heterojunction. Background technique [0002] Heterojunction is an important part of semiconductor devices. Scientists have done a lot of research on it, and silicon-based CdS heterojunction is an important research direction. With the development of society and economy, in order to realize different functions and requirements, higher requirements are put forward for the size of semiconductor devices. Scientists use various means to reduce the size of heterojunctions, such as using nanotechnology to deposit CdS nanofilms and nanoparticles on single crystal silicon, polycrystalline silicon and porous silicon substrates to prepare silicon-based CdS heterojunctions. However, due to technical reasons, the thickness of the heterojunction prepared on single crystal silicon, polycrystalline silicon and porous silicon substrat...

Claims

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Application Information

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IPC IPC(8): C23C14/18C23C14/06C23C14/35
CPCC23C14/0623C23C14/185C23C14/3407C23C14/35
Inventor 姬鹏飞李勇宋月丽周丰群袁书卿田明丽
Owner PINGDINGSHAN UNIVERSITY