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A kind of preparation method of cds/si nano film heterojunction

A nano-thin film and heterojunction technology, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of unfavorable industrialization, high requirements for preparation parameters, and increased device cost, etc., and achieve reduction Production cost, low value, size reduction effect

Active Publication Date: 2021-07-23
PINGDINGSHAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Silicon thin films are usually obtained by plasma-enhanced chemical vapor deposition, rapid annealing crystallization, solid-phase crystallization, excimer laser crystallization, metal-induced crystallization, etc. However, these methods do not require too high a temperature for the substrate , that is, the requirements for the preparation parameters are too high, which greatly increases the cost of the device, which is not conducive to industrialization

Method used

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  • A kind of preparation method of cds/si nano film heterojunction
  • A kind of preparation method of cds/si nano film heterojunction
  • A kind of preparation method of cds/si nano film heterojunction

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] like figure 1 As shown, the method of preparing the CDS / Si nano film heterojunction, the method first deposits Si on the ITO conductive film with magnetron sputtering techniques by the ITO conductive film, and prepares nanostructures ITO / Si. The cds were then deposited on the nanostructure ITO / Si, and the nanostructure ITO / Si / CDS was prepared by magnetron structure ITO / Si / CDS; and finally deposited Ag on the nanostructure ITO / Si / CDS using magnetron sputtering techniques. Si / CDS / Ag heterojunction. The following steps are specifically included:

[0041] Step S101, secure the ITO electrical film on the sample holder of the magnetron sputtering chamber, vacuum to 10 magnetron sputtering chamber -6 PA, then charge the magnetron sputtering chamber into argon, keep the magnetron sputter chamber vacuum is 10 -1 PA ~ 50PA;

[0042] Step S102, adjusting the distance of 5 cm of the Si target and the ITO conductive film, and the sputtering power is 30 w to 120W;

...

Embodiment 2

[0052] The method of preparing the CDS / Si nano film heterojunction, comprising the steps of:

[0053] Step S201, secure the ITO electrical film on the sample holder of the magnetron sputtering chamber, vacuum to 10 magnetron sputtering chamber -6 Pa, then charge the magnetron sputtering chamber to the magnetron sputtering chamber vacuum degree of 1 Pa;

[0054] Step S202, adjusting the distance of 5 cm of the Si target and the ITO conductive film, setting the sputtering power of 60W;

[0055] Step S203, the pre-sputtering of 60s, the baffle of the Si target, starts sputtering, sputtering time, deposits about 1 μm of Si on the ITO conductive film, and nanostructures ITO / Si;

[0056] Step S204, the sputtering time is rear, turn off the sputtering power supply, turn on the heating power supply, 30min heating the ITO / Si sample to 300 ° C, holding 50 min at 1 Pa, and the structure of the Si film is image 3 As shown, its topography is like Figure 4 Indicated;

[0057] Step S205, m...

Embodiment 3

[0065] Step S301, secure the ITO electrical film on the sample holder of the magnetron sputtering chamber, vacuum to 10 magnetron sputtering chamber -6 Pa, then charge the magnetron sputtering chamber to the magnetron sputtering chamber vacuum degree of 1 Pa;

[0066] Step S302, adjusting the distance of 5 cm of the Si target and the ITO conductive film, and the sputtering power is 60W;

[0067] Step S303, the pre-sputtering 60s, the baffle of the Si target, starting the sputtering, sputtering time, depositing the thickness of Si on the ITO conductive film, and nanostructures ITO / Si;

[0068] Step S304, the sputtering time is reusable, turn off the sputtering power supply, open the heating power supply, and heat the ITO / Si sample to 300 ° C for 30min, and maintain 50 min, the structure of the Si film is as Figure 7 As shown, its topography is like Figure 8 Indicated;

[0069] Step S305, hold the magnetron sputtering chamber pressure 1Pa, replace the Si target to a CDS target, ...

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Abstract

The invention belongs to the technical field of heterojunction preparation, and in particular relates to a method for preparing a CdS / Si nano-film heterojunction. In the method, an ITO conductive film is used as a substrate, and magnetron sputtering technology is used to deposit the ITO conductive film on the ITO conductive film. Si, to prepare nanostructured ITO / Si; then use magnetron sputtering technology to deposit CdS on nanostructured ITO / Si to prepare nanostructured ITO / Si / CdS; finally use magnetron sputtering technology to deposit CdS on nanostructured ITO / Si / CdS Ag is deposited on the nanometer ITO / Si / CdS / Ag heterojunction. The invention is simple and efficient, and is easy to regulate the structure and size of each component of the heterojunction.

Description

Technical field [0001] The present invention belongs to the field of heterogeneous junction, and in particular, to the preparation method of heterojunction of CDS / Si nano-membrane. Background technique [0002] Heterojun is an important part of semiconductor devices, and scientists have conducted a lot of research on this, and silicon-based CDS heterojun is an important research direction. With the development of social economy, in order to achieve different functions and demand, the size of the semiconductor device has put forward higher requirements. Scientists use various means to reduce the size of heterogeneous knots, such as using nanoplasm, depositing a CDS nano film, nanopartium, or the like on single crystal silicon, polysilicon and porous silicon substrate, and is prepared. However, currently single crystal silicon, polysilicon and porous silicon substrates, due to technical reasons, and the thickness of the heterojunction is still unable to meet special needs. If the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/18C23C14/06C23C14/35
CPCC23C14/0623C23C14/185C23C14/3407C23C14/35
Inventor 姬鹏飞李勇宋月丽周丰群袁书卿田明丽
Owner PINGDINGSHAN UNIVERSITY