Electrostatic discharge protection structure with low parasitic capacitance and electrostatic discharge protection circuit thereof
A technology for electrostatic discharge protection and low parasitic capacitance, which is applied in the field of electrostatic discharge protection structures and electrostatic discharge protection circuits, and can solve problems such as high capacitance values
Pending Publication Date: 2021-01-12
AMAZING MICROELECTRONICS
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Problems solved by technology
It can be seen that, using this existing structure, the junction capacitance in the circuit will be equal to the capacitance of the first diode D1 and the second diode D2, that is, (D1+D2), and this approach will lead to Extremely high capacitance values and undesirable results for circuit designers
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[0069] The above description about the content of the present invention and the following embodiments are used to demonstrate and explain the spirit and principle of the present invention, and provide a further explanation of the patent application scope of the present invention. The features, implementation and effects of the present invention are described in detail as follows with reference to preferred embodiments in conjunction with the drawings.
[0070] Wherein, reference is made to preferred embodiments of the invention, examples of which are shown in the drawings, and throughout the drawings and description, the invention uses the same reference numerals as far as possible to refer to the same or like components.
[0071] The following embodiments of the present invention are disclosed in order to clarify the technical content and technical features of the present invention, and to enable those skilled in the art to understand, manufacture, and use the present inventio...
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The invention relates to an electrostatic discharge protection circuit with low parasitic capacitance. The electrostatic discharge protection circuit comprises a first double-carrier junction transistor and a first electrostatic discharge power clamping assembly. The first double-carrier junction transistor is an NPN-type double-carrier junction transistor, a base electrode and an emitting electrode of the first double-carrier junction transistor are jointly connected with an input and output end, and a collector electrode of the first double-carrier junction transistor is connected with the first electrostatic discharge power clamping assembly. The first electrostatic discharge power clamping assembly is connected with the grounding end. The first electrostatic discharge power clamping component can be a Zener diode, an NPN-type and PNP-type double-carrier junction transistor, or a similar component. When positive electrostatic discharge pulses are injected, the electrostatic discharge protection path is composed of a first double-carrier junction transistor and a first electrostatic discharge power clamping assembly. When a negative electrostatic discharge pulse is injected, theelectrostatic discharge protection path is composed of a parasitic silicon controlled rectifier, so that the parasitic capacitance is effectively reduced.
Description
technical field [0001] The invention relates to an electrostatic discharge protection framework, in particular to an electrostatic discharge protection structure with low parasitic capacitance and an electrostatic discharge protection circuit thereof. Background technique [0002] With the rapid development of today's technology, integrated circuits (integrated circuits, ICs) have been widely used in various electronic components. However, during testing, assembly, and operation of these electronic components, problems of Electro Static discharge (ESD) are often encountered, thereby causing considerable damage and threats to the internal integrated circuits. Generally speaking, it is known that electrostatic discharge is a phenomenon of charge release and transfer between the chip of an integrated circuit and an external object. Due to the transfer of a large amount of charge in a short period of time, it will cause the release of excessive energy. If the energy exceeds the...
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IPC IPC(8): H01L27/02
CPCH01L27/0248H01L27/0259H01L27/0255H01L27/0296H01L29/861H01L29/8611H01L27/0262H01L29/866H02H9/046
Inventor 沈佑书
Owner AMAZING MICROELECTRONICS