Low-noise amplifier, radio frequency front-end circuit, device and equipment

A low-noise amplifier and circuit technology, applied in the field of low-noise amplifiers, RF front-end circuits, equipment, and devices, can solve the problems of noise characteristic deterioration, poor consistency, high random noise, etc., and achieve the effect of reducing noise figure and saving chip area

Pending Publication Date: 2020-04-10
CHONGQING BAIRUI INTERNET ELECTRONICS TECH CO LTD
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Problems solved by technology

[0003] Traditional low-noise amplifiers have high random noise (especially at 2.4GHz or higher frequencies) due to the CMOS process, and poor consistency in the manufacturing process. When used as a low-noise amplifier, the noise figure is difficult to achieve low It is less than 1.5 decibels, and as the process technology decreases from 0.18um to 28nm, the channel length is getting lower and lower, resulting in lower gain and lower signal amplification effect
[0004] In order to obtain a relatively large gain,

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  • Low-noise amplifier, radio frequency front-end circuit, device and equipment

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[0034] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, so that the advantages and features of the present invention can be more easily understood by those skilled in the art, so as to define the protection scope of the present invention more clearly.

[0035] It should be noted that the terms "first", "second", and "third" in the claims and description of the present application are used to distinguish similar objects, and not necessarily used to describe a specific sequence or sequence.

[0036] The design of the present invention adopts SiGe BiCMOS technology, has combined the BiCMOS technology in CMOS technology and silicon germanium (SiGe) heterojunction (HBT) triode technology, has not only utilized the characteristic of SiGe technology high gain and low noise, combined It realizes the flexible characteristics of CMOS process control. The invention adopts SiGe HBT as the core part of the l...

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Abstract

The invention discloses a low-noise amplifier, a radio frequency front-end circuit, a device and equipment, and belongs to the technical field of electronics and communication. The low-noise amplifieris composed of a current mirror module composed of a CMOS circuit and a signal amplification module composed of a silicon germanide heterojunction triode circuit. According to the low-noise amplifier, the noise coefficient of the low-noise amplifier is reduced, the occupied area of a chip is saved, the processing and operating cost of the chip and equipment is saved, and the communication efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of electronics and communication, in particular to a low-noise amplifier, a radio frequency front-end circuit, a device and equipment. Background technique [0002] The existing low-noise amplifiers used for BLE are basically CMOS process, such as figure 1 Common 2.4GHz CMOS LNA shown. [0003] Traditional low-noise amplifiers have high random noise (especially at 2.4GHz or higher frequencies) due to the CMOS process, and poor consistency in the manufacturing process. When used as a low-noise amplifier, the noise figure is difficult to achieve low It is less than 1.5 decibels, and as the process technology decreases from 0.18um to 28nm, the channel length is getting lower and lower, resulting in lower gain and lower signal amplification effect. [0004] In order to obtain a relatively large gain, the current must be increased, which increases the size of the device, and the parasitic capacitance effect cau...

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Application Information

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IPC IPC(8): H03F1/26H03F3/193
CPCH03F1/26H03F3/1935
Inventor 苏杰徐祎喆朱勇
Owner CHONGQING BAIRUI INTERNET ELECTRONICS TECH CO LTD
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