A semiconductor chip device
A semiconductor and chip technology, applied in the field of semiconductor chip devices, can solve the problems affecting the final packaging yield, unreliable electrical connection, virtual welding, etc., to reduce the lateral expansion area of the underfill and reduce the lateral expansion area. Effect
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no. 1 example
[0035] This embodiment provides a semiconductor chip device, such as figure 1 and 2 As shown, it includes a substrate structure and a chip structure arranged in sequence. The substrate structure includes a substrate 1, a first dielectric layer 2 and a second dielectric layer 5 on the substrate 1, a through hole 4 is formed in the first dielectric layer 2 and penetrates through the first dielectric layer The electrical layer 2, the through holes 4 are electrically interconnected with the connection pads 3 of the substrate 1, and the substrate 1 may be a PCB substrate, a system board, or an intermediary board.
[0036] A wiring layer 7 is formed on the first dielectric layer 2, and the wiring layer 7 is electrically interconnected to the through hole 4. The wiring layer 7 can be formed by conventional deposition or electroplating methods, and it adjusts the pad The lead-out position of the package provides flexibility in the lead-out of the package's terminals.
[0037] The s...
no. 2 example
[0045] see image 3 and 4, the structure of this embodiment is similar to the structure of the first embodiment, the difference is that there are a plurality of first pads 15, a plurality of second pads 10 and a plurality of pads located in the photocurable resin layer 6 The annular metal layer 16 between the plurality of first pads 15 and the plurality of second pads 10, the annular metal layer 16 can be used with the plurality of first pads 15 and the plurality of second pads 10 The same method and the same material are integrally formed. It is worth mentioning that the plurality of first pads 15 in this embodiment are located within the projection of the chip 12 on the photocurable resin layer 6, but the plurality of annular metal layers 16 and the The second pads 10 are located outside the projection.
[0046] A nickel-silicon coating 17 is also plated on the annular metal layer 16, and the nickel-silicon coating 17 is consistent with that of the first embodiment, and w...
no. 3 example
[0048] see Figure 5 and 6 , in this embodiment, its structure is basically similar to that of the first embodiment. The difference is that there is no nickel-silicon plating on the second pad, but a groove or concavity is formed on the extension. In this embodiment, the plurality of second solder pads 18 also have a welding portion 81 and an extension portion 82 , and its specific structure refers to the first embodiment. And there is a concave shape 19 at the position of the extension part 82 , the concave shape 19 is an arc concave shape, and the concave shape 19 is located outside the projection of the chip 12 on the photocurable resin layer 6 . see Figure 5 , part of the underfill glue 14 extends into the concave shape 19 , and the edge of the underfill glue 14 is located inside the concave shape 19 . Wherein, the concave shape 19 is formed by laser ablation.
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