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Manufacturing method of inner lens

A manufacturing method and inner lens technology, applied in radiation control devices, electrical components, electrical solid devices, etc., can solve the problem of small process window, lack of mass production, difficulty in controlling photoresist morphology uniformity and stability and other issues, to achieve the effect of easy development and control, and a large process window

Active Publication Date: 2020-04-21
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the small process window of this process, it is difficult to control the morphology uniformity and stability of the photoresist after reflow, so this process has not been mass-produced at present.

Method used

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  • Manufacturing method of inner lens
  • Manufacturing method of inner lens
  • Manufacturing method of inner lens

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Embodiment Construction

[0041] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0042] It should be noted that, in the following specific embodiments, when describing the embodiments of the present invention in detail, in order to clearly show the structure of the present invention for the convenience of description, the structures in the drawings are not drawn according to the general scale, and are drawn Partial magnification, deformation and simplification are included, therefore, it should be avoided to be interpreted as a limitation of the present invention.

[0043] In the following specific embodiments of the present invention, please refer to Figure 7 , Figure 7 It is a process flow diagram of a manufacturing method of an inner lens of the present invention; at the same time, please refer to Figure 8-Figure 22 , Figure 8-Figure 22 is the basis of a preferred embodiment of the present invention ...

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Abstract

The invention discloses a manufacturing method of an inner lens. The manufacturing method comprises the following steps: forming a sacrificial layer and a photoresist pattern on a substrate, and etching the sacrificial layer by adopting anisotropy to form a first groove; adopting isotropic etching to form a second groove with the width larger than that of the first groove below the first groove; repeating the above steps, forming a plurality of grooves in the sacrificial layer, and enabling the widths of the grooves in the even-numbered positions to be gradually increased in sequence, therebyforming a cavity; trimming the side wall of the cavity by adopting isotropic etching to form a cavity with a step-shaped side wall; filling the cavity with a bottom-layer inner lens material, and thenremoving the sacrificial layer to form a bottom-layer inner lens material layer with a step-shaped surface morphology; and covering the bottom-layer inner lens material layer to form a top-layer inner lens material layer so as to form an inner lens structure. The method is large in process window and can be realized by adopting a conventional semiconductor process method and is easy to develop, control and manage.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing technology, in particular to a method for manufacturing an inner lens of a CMOS image sensor. Background technique [0002] A CMOS image sensor (CIS) is a typical solid-state imaging sensor, which consists of a pixel cell array, a row driver, a column driver, a timing control logic circuit, an AD converter, a data bus output interface, and a control interface. Because its manufacturing process is simpler than that of charge-coupled device (CCD) sensors, it can be well combined with integrated circuit manufacturing, and can also integrate other digital circuits, with low cost, simple design, high integration and low power consumption. This advantage has been more and more widely used in security monitoring, vehicle-mounted, spectrum observation, etc., and it is also more and more popular in the market. [0003] The CMOS image sensor converts the light signal ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14685H01L27/14627Y02P40/57
Inventor 姚嫦娲周伟
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT