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Efficient preparation method of CuInS2/ZnS semiconductor nanocrystals in cuboid shape

A cuboid and nanocrystal technology is applied in the field of efficient preparation of CuInS2/ZnS semiconductor nanocrystals, which can solve problems such as limiting large-scale production and application, and achieve the effect of enhancing stability.

Active Publication Date: 2020-04-28
上海尚朴光电技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the best-studied II-VI and IV-VI semiconductor nanocrystals generally contain highly toxic heavy metals cadmium and lead, which severely limit their large-scale production and application.

Method used

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  • Efficient preparation method of CuInS2/ZnS semiconductor nanocrystals in cuboid shape
  • Efficient preparation method of CuInS2/ZnS semiconductor nanocrystals in cuboid shape
  • Efficient preparation method of CuInS2/ZnS semiconductor nanocrystals in cuboid shape

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Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0022] (1) Preparation of CuInS with an average size of 2.7nm 2 / ZnS nano-nuclei (NCs), purified and dissolved in TOP to obtain a TOP / NCs solution, the concentration of nano-nuclei in the TOP / NCs solution is 45nmol / mL, figure 1 For the obtained CuInS 2 / Transmission electron microscope image of ZnS nanocore, image 3 The dotted line in is the resulting CuInS 2 The absorption spectrum of / ZnS nano-core;

[0023] (2) Under an argon atmosphere, mix sulfur powder with TOP, and sonicate until a clear TOP / S solution is obtained; the concentration of sulfur in the TOP / S solution is 3mol / L;

[0024] (3) Take 10mmol of tri-n-octylphosphine, add 2mmol of ZnO and 10mmol of oleic acid, heat to 130°C for 60 minutes under argon atmosphere, and then raise the temperature to 350°C to make the reactant into a clear solution;

[0025] (4) Inject 2 mL of the TOP / NCs solution in step (1) into the product in step (3), set the temperature at 340 °C, and inject 2 mL of the TOP / S solution in ste...

Embodiment approach 2

[0027] (1) Preparation of CuInS with an average size of 2.5nm 2 / ZnS nano-core (NCs), purified and dissolved in TOP to obtain a TOP / NCs solution, the concentration of the nano-core in the TOP / NCs solution is 52.6nmol / mL;

[0028] (2) Under an argon atmosphere, mix sulfur powder with TOP, and sonicate until a clear TOP / S solution is obtained; the concentration of sulfur in the TOP / S solution is 2.7mol / L;

[0029] (3) Take 9.1 mmol of tri-n-octylphosphine, add 1.8 mmol of ZnO and 9 mmol of oleic acid, heat to 120 °C for 50 minutes under an argon atmosphere, and then raise the temperature to 345 ° C to make the reactant into a clear solution;

[0030] (4) Inject 1.5mL of the TOP / NCs solution in step (1) into the product in step (3), set the temperature at 335°C, and inject the TOP / S solution in step (2) when the temperature returns to 335°C 2.1mL, reacted for 15 minutes and cooled to room temperature to obtain cuboid CuInS 2 / ZnS nanocrystals.

Embodiment approach 3

[0032] (1) Preparation of CuInS with an average size of 3.5nm 2 / ZnS nano core (NCs), purified and dissolved in TOP to obtain a TOP / NCs solution, the concentration of the nano core in the TOP / NCs solution is 40nmol / mL;

[0033] (2) Under an argon atmosphere, mix sulfur powder with TOP, and sonicate until a clear TOP / S solution is obtained; the concentration of sulfur in the TOP / S solution is 4.9mol / L;

[0034] (3) Take 11.6 mmol of tri-n-octylphosphine, add 3 mmol of ZnO and 15.3 mmol of oleic acid, heat to 125 under an argon atmosphere and react for 55 minutes, then raise the temperature to 348° C. to make the reactant into a clear solution;

[0035] (4) Inject 2.5 mL of the TOP / NCs solution in step (1) into the product in step (3), set the temperature at 3370°C, and inject the TOP / S solution in step (2) when the temperature returns to 337°C 1.9mL, reacted for 16 minutes and cooled to room temperature to obtain cuboid CuInS 2 / ZnS nanocrystals.

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Abstract

The invention discloses an efficient preparation method of CuInS2 / ZnS semiconductor nanocrystalline in a cuboid shape. The preparation method specifically comprises the following steps: (1) preparingCuInS2 / ZnS nano cores, performing purification, and then dissolving the nano cores in tri-n-octylphosphine to obtain a TOP / NCs solution; (2) in an argon environment, mixing sulfur powder with TOP, andcarrying out ultrasonic treatment until a clear TOP / S solution is obtained; (3) heating tri-n-octylphosphine oxide, zinc oxide and oleic acid to 120-130 DEG C in an argon environment to react for 50-60 minutes, and heating to 345-350 DEG C to change reactants into a clear solution; and (4) injecting the TOP / NCs solution into the product obtained in the step (3), setting the temperature to be 335-340 DEG C, injecting the TOP / S solution when the temperature is 335-340 DEG C, reacting for 15-18 minutes, and cooling to room temperature to obtain the CuInS2 / ZnS nanocrystals in a cuboid shape.

Description

technical field [0001] The invention relates to a high-efficiency preparation method of CuInS2 / ZnS semiconductor nanocrystals in the shape of a cuboid. Background technique [0002] The development of new materials is the main driving force for technological development. The preparation and manipulation of nanocrystals and the understanding of their size- and shape-dependent properties have progressed tremendously in the past two decades. The properties of nanomaterials can be tuned not only by their chemical composition but also by their geometric parameters. For example, the bandgap of semiconductor nanocrystals depends on the size of the nanocrystals. Therefore, by controlling the size of nanocrystals in the nanoscale range, we can conveniently tune the optical properties of materials. This can be achieved by wet-chemical synthesis methods, which typically produce colloidal solutions of nanocrystals protected by shells of organic ligands. Adjusting the parameters of s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G15/00C01G9/08B82Y40/00B82Y30/00
CPCC01G15/006C01G9/08B82Y40/00B82Y30/00C01P2004/82C01P2004/39Y02P70/50
Inventor 黄博张辉朝
Owner 上海尚朴光电技术有限公司
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