Iterative calculation method for junction temperature of IGBT module and related device

Abstract

The invention discloses an IGBT module junction temperature iterative calculation method and a related device. The method comprises the steps: inputting the first power loss of each point of an obtained first power loss curve into an established Foster thermal network model, obtaining a first junction temperature, and generating a first junction temperature curve; inputting the second power loss of each point of the second power loss curve updated according to the first junction temperature curve into a model to generate a second junction temperature curve; calculating junction temperature difference values of the first junction temperature curve and the second junction temperature curve at the same moment; when the maximum junction temperature difference value is smaller than a preset threshold value, outputting a second junction temperature curve; when the maximum junction temperature difference value is not smaller than a preset threshold value; and taking the second junction temperature curve as a new first junction temperature curve, and returning to the step of updating the first power loss curve according to the first junction temperature curve to obtain the second power loss curve, thereby solving the problem of low junction temperature result accuracy caused by the fact that the relation between junction temperature and power loss is not considered in the junction temperature curve obtained by calculation in the prior art.

Description

technical field [0001] The present application relates to the technical field of transistors, in particular to an iterative calculation method and a related device for the junction temperature of an IGBT module. Background technique [0002] The insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) is divided into a welding type IGBT and a pressure connection type IGBT according to the structure. The welding type IGBT connects each pole of the chip to the package by the bonding wire, and directly connects each pole to the circuit with a lead wire when in use; the crimping type IGBT is a layered structure formed by crimping the chip layer and the metal layer. When in use, external pressure is required to ensure the stable electrical connection of each layer. Compared with the traditional welding IGBT, the crimp type IGBT can withstand higher voltage and higher current, and has the characteristic of short circuit after device failure. At present, the cr...

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Problems solved by technology

[0004] This application provides an iterative calculation method and related devices for the IGBT module junction temperature, which are used to solve the problem that the junction temperature c...

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