Iterative calculation method for junction temperature of IGBT module and related device

An iterative calculation and junction temperature technology, applied in the field of transistors, can solve the problems of low accuracy of junction temperature results and failure to consider the relationship between junction temperature and power loss, etc.

Active Publication Date: 2020-04-28
GUANGDONG POWER GRID CO LTD +1
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Problems solved by technology

[0004] This application provides an iterative calculation method and related devices for the IGBT module junction temperature, which are used to solve the problem that the junction temperature c...

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  • Iterative calculation method for junction temperature of IGBT module and related device
  • Iterative calculation method for junction temperature of IGBT module and related device
  • Iterative calculation method for junction temperature of IGBT module and related device

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Embodiment Construction

[0052] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiment of the application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiment of the application. Obviously, the described embodiment is only It is a part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0053] For ease of understanding, see Figure 1 to Figure 3 , an embodiment of an iterative calculation method for an IGBT module junction temperature provided by the present application, including:

[0054] Step 101. Calculate the first power loss according to the parameters of the target IGBT module, and generate a first power loss curve.

[0055] It should be ...

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Abstract

The invention discloses an IGBT module junction temperature iterative calculation method and a related device. The method comprises the steps: inputting the first power loss of each point of an obtained first power loss curve into an established Foster thermal network model, obtaining a first junction temperature, and generating a first junction temperature curve; inputting the second power loss of each point of the second power loss curve updated according to the first junction temperature curve into a model to generate a second junction temperature curve; calculating junction temperature difference values of the first junction temperature curve and the second junction temperature curve at the same moment; when the maximum junction temperature difference value is smaller than a preset threshold value, outputting a second junction temperature curve; when the maximum junction temperature difference value is not smaller than a preset threshold value; and taking the second junction temperature curve as a new first junction temperature curve, and returning to the step of updating the first power loss curve according to the first junction temperature curve to obtain the second power loss curve, thereby solving the problem of low junction temperature result accuracy caused by the fact that the relation between junction temperature and power loss is not considered in the junction temperature curve obtained by calculation in the prior art.

Description

technical field [0001] The present application relates to the technical field of transistors, in particular to an iterative calculation method and a related device for the junction temperature of an IGBT module. Background technique [0002] The insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) is divided into a welding type IGBT and a pressure connection type IGBT according to the structure. The welding type IGBT connects each pole of the chip to the package by the bonding wire, and directly connects each pole to the circuit with a lead wire when in use; the crimping type IGBT is a layered structure formed by crimping the chip layer and the metal layer. When in use, external pressure is required to ensure the stable electrical connection of each layer. Compared with the traditional welding IGBT, the crimp type IGBT can withstand higher voltage and higher current, and has the characteristic of short circuit after device failure. At present, the cr...

Claims

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Application Information

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IPC IPC(8): G06F17/10
CPCG06F17/10
Inventor 张健余超耘
Owner GUANGDONG POWER GRID CO LTD
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