A transfer printing process method for flexible mems devices

A process method and flexible technology, applied in the field of semiconductor/MEMS manufacturing process, can solve the problems of long release time, device structure failure, high requirements for accurate transfer temperature and time, etc., to enhance adhesion and improve transfer success. rate, the effect of shortening the release time

Active Publication Date: 2022-06-21
DALIAN UNIV OF TECH
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Problems solved by technology

[0004] The thermal release tape transfer method has high requirements on the precise grasp of the transfer temperature and time; the water-soluble tape will decompose when it meets water, but a small amount of residue remains on the surface of the structure, polluting the structure; PDMS is the most widely used in the flexible transfer process stamp material, the process is the most feasible, but the traditional transfer process often uses SiO 2 In order to release the sacrificial layer of the process, it was found in many experiments that SiO 2 When used as a sacrificial layer, the release time is too long, causing the device structure to fail due to too long soaking time in HF acid buffer, and the adhesion between the device and the flexible acceptor substrate is too weak during the printing process

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  • A transfer printing process method for flexible mems devices
  • A transfer printing process method for flexible mems devices

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specific Embodiment approach

[0021] A transfer printing process method for flexible MEMS devices, the specific steps are as follows:

[0022] step one, as figure 1 As shown in step ①, a layer of SiN is deposited by PECVD on the cleaned 2-inch monocrystalline silicon wafer X sacrificial layer film, where NH 3 and SiH 4 The injection ratio of TiO was 8:1, the reaction temperature was 450 °C, the reaction pressure was 160 Pa, and the deposition rate was 1 nm / s. After the deposition is completed, the thickness is measured. In this example, SiN X The thickness of the sacrificial layer is 0.8 μm;

[0023] Step two, as figure 1 As shown in step ①, the SiN X The bottom electrode Ti(50nm) / Pt(200nm)-PZT(500nm)-upper electrode Cr(10nm) / Au(100nm) three-layer device structure was fabricated on the sacrificial layer. 600r / min, glue mixing time 9s, high speed 3000r / min, glue mixing time 30s), pre-baking (temperature is 120℃, time is 3min), nitrogen oven curing (curing adopts step drying, the temperature is 50℃, 3...

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Abstract

The invention belongs to the technical field of semiconductor / MEMS manufacturing technology, and provides a transfer printing process method for flexible MEMS devices, especially for transferring structures or devices that have been fabricated on rigid substrates such as silicon to polyamide Imine, PET, PDMS and other flexible substrates. In the case of a PZT-based flexible piezoelectric energy harvester, the low success rate of the process affects the success rate of the overall process. The present invention innovatively proposes a SiN made by PECVD deposition. X As a sacrificial layer released before transfer, compared with SiO in the traditional process 2 For the sacrificial layer of the release process, this improvement significantly shortens the release time, so that the structure will not be soaked in the HF acid buffer for too long to cause failure, and the success rate of the transfer process is greatly improved. At the same time, a process improvement of pressurization and heating during the transfer printing is proposed, which further improves the transfer success rate.

Description

technical field [0001] The invention belongs to the technical field of semiconductor / MEMS manufacturing processes, and is a process method for improving the success rate of multi-layer microstructure transfer by improving sacrificial layers and process conditions, and is suitable for the transfer process flow of flexible MEMS devices. Background technique [0002] Extensible flexible MEMS electronic devices combine inorganic electronic materials with flexible substrates, which not only maintains the superior electrical properties of inorganic electronic materials, but also has good ductility. application prospects. However, inorganic electronic materials cannot be grown and processed directly on flexible substrates. In order to solve this problem, researchers have developed transfer printing technology, which peels inorganic thin films from their growth substrates and prints them on flexible substrates. Therefore, with the development of flexible MEMS With the rise and deve...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00
CPCB81C1/00134B81C1/00476
Inventor 崔岩高志东李嘉豪于舜尧
Owner DALIAN UNIV OF TECH
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