Bipolar IC collector emitter electric leakage triode detection method

Abstract

With the high-speed development of microelectronics technologies, the scale of integrated circuits is larger and larger. Due to reasons in manufacturing processes, circuit failure is inevitably generated, and how to quickly and accurately find a failure site is the focus of failure analysis work. The electric leakage failure site is now positioned by techniques such as EMMI (infrared light-emitting microscopy), OBIRCH (laser scanning microscope laser-induced resistivity change), ion probes and the like, however, these methods are expensive in instruments, costly, and long in cycle. According to the invention, doped regions of different concentrations of an IC under oxidization corrosion are different in potentials and different in reaction rates, and different colors are generated on the corroded surfaces; when electric leakage paths exist, the principle that the colors are the same at the same potentials and the same corrosion rates is performed; and through the continuous corrosion effect of a hydrofluoric acid and nitric acid mixed liquid on silicon in the IC, an IC collector emitter electric leakage triode detection method with convenience in analysis, low cost and high reliability is provided.

Description

technical field [0001] The invention relates to a chip detection method, in particular to a triode detection method for collector-emitter leakage in a bipolar IC. Background technique [0002] With the rapid development of microelectronics technology, the scale of integrated circuits is getting larger and larger, and the scale of integrated circuits has reached hundreds of millions of components. Due to the manufacturing process, circuit failure is unavoidable. How to quickly and accurately find the failure location and analyze the cause of the failure is the focus of the failure analysis work. In order to further find out the cause, it is convenient to take improvement measures and improve the yield rate. [0003] In the failure of IC, the failure of triode PN junction leakage is a very common failure mode. Existing methods for locating triode leakage generally use techniques such as EMMI (infrared luminescence microscopy), OBIRCH (laser scanning microscope laser-induced ...

AI Technical Summary

Problems solved by technology

These methods are complicated to make samples, expensive analytical instruments, and high analysis cost, and are more suitable for failure analysis of ultra-large-scale integrated circuits at the nanometer level. For small-scale ICs, these methods have high analysis costs and long analysis cycles.

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