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CMOS image sensor pixel structure with large photosensitive area charge rapid transfer

An image sensor and photosensitive area technology, applied in the direction of electric solid-state devices, circuits, electrical components, etc., can solve the problem of incomplete transfer and transfer speed of photo-generated charges, so as to improve the effective full well capacity, ensure the tailing phenomenon, and reduce the transfer time Effect

Inactive Publication Date: 2020-05-01
TIANJIN UNIV MARINE TECH RES INST
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as the photosensitive area increases, it will lead to the problem of incomplete transfer of photogenerated charges and slow transfer speed.

Method used

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  • CMOS image sensor pixel structure with large photosensitive area charge rapid transfer
  • CMOS image sensor pixel structure with large photosensitive area charge rapid transfer
  • CMOS image sensor pixel structure with large photosensitive area charge rapid transfer

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Embodiment Construction

[0012] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but the scope of protection of the present invention is not limited thereto.

[0013] The CMOS image sensor pixel structure with large photosensitive area and rapid charge transfer can form a lateral electric field inside the PPD by using N-type dopant implantation in the PPD region with multiple concentration gradient changes, shortening the diffusion distance of photogenerated charges during the transfer process. Using this structure can make the charge complete and greatly shorten the transfer time.

[0014] In the process of forming the N-type region of the photodiode, the idea of ​​ion implantation using multiple concentration gradient changes in the lateral direction belongs to the spirit scope of the patent of the present invention.

[0015] In the present invention, the two N-type ion implantations in the photodiode region all use P ions,...

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Abstract

The invention discloses a CMOS image sensor pixel structure with large photosensitive area charge rapid transfer. By forming gradient change of the doping concentration in a photodiode region, an electric field from an end close to a transmission tube to an end far away from the transmission tube is formed in the charge transfer process, the transfer of photo-induced electrons is accelerated, thecomplete transfer can be realized, a trailing phenomenon is eliminated, and performance of a CMOS image sensor is improved; the process condition that the concentration changes in a gradient manner shortens a lateral diffusion distance of photo-generated charges in a photodiode region, so the transfer time of the photo-generated charges can be effectively reduced under the action of a lateral electric field.

Description

technical field [0001] The invention belongs to the field of CMOS image sensors, in particular to a pixel structure of a CMOS image sensor with a large photosensitive area and fast charge transfer. Background technique [0002] In recent years, with the rapid development of CMOS manufacturing technology, the characteristics of low power consumption, low cost, high integration and high flexibility of CMOS image sensors have made the market share of CMOS image sensors surpass that of CCD image sensors, especially in China. Low-end consumer electronics industry. [0003] The pixel part of the CMOS image sensor now mostly adopts a PPD structure of 4 tubes, which is composed of a photodiode, a transmission tube, a floating diffusion node, a reset tube, a source follower, and a selection tube. figure 1 Shown is a block diagram of a 4T pixel. When light is incident on the surface of a semiconductor, a portion of the incident light is reflected, while the rest is absorbed by the s...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/1461H01L27/14643H01L27/14689
Inventor 徐江涛王瑞硕史兴萍李凤夏梦真
Owner TIANJIN UNIV MARINE TECH RES INST