Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A Method for Realizing Local Lifetime Control of Semiconductor Devices

A local lifetime control, semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, final product manufacturing, etc. The effect of forward performance and switching performance, process threshold and cost reduction, and on-voltage reduction

Active Publication Date: 2022-05-17
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF13 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, the global lifetime control technology has the following disadvantages: while reducing the non-substance lifetime, it will significantly reduce the non-substance concentration in the conduction state, increase the on-resistance and voltage drop, and deteriorate the conduction performance of the device
The current local lifetime control method is mostly realized by helium ion implantation, but the helium ion implantation machine used for helium ion implantation is difficult and expensive to manufacture, which greatly increases the process threshold and price cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Method for Realizing Local Lifetime Control of Semiconductor Devices
  • A Method for Realizing Local Lifetime Control of Semiconductor Devices
  • A Method for Realizing Local Lifetime Control of Semiconductor Devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Embodiment 1 of the present invention provides a method for realizing local lifetime control of semiconductor devices, such as figure 1 shown, including the following steps:

[0042] S1: covering the first surface of the non-metallized semiconductor device with an impurity source, the impurity source being an element having a recombination center effect or a substance containing the element;

[0043] S2: Obtain the parameters of the complementary error function according to the preset diffusion depth, the variation curve of the diffusion coefficient of the impurity source with temperature, and the variation curve of the solid solubility of the impurity source with temperature;

[0044] S3: Obtain the diffusion temperature and diffusion time according to the parameters of the complementary error function;

[0045] S4: Diffusion the recombination center atoms in the impurity source to a target diffusion depth in the semiconductor device according to the diffusion tempera...

Embodiment 2

[0063] Embodiment 2 of the present invention provides a method for realizing local lifetime control of a semiconductor device, which is based on Embodiment 1 of the present invention, and between step S4 and step S5, further includes step S4(2): removing the impurity source, and then cover the impurity source on the first surface, and repeat steps S2-S4, wherein the preset diffusion depth in step S2 is greater than the preset diffusion depth in step S4(2), thereby forming a second highest life zone 110, the first medium life zone 111, the third low life zone 112, such as Figure 12 As shown, the local lifetime control effect of the step type in the same direction is realized.

Embodiment 3

[0065] Embodiment 3 of the present invention provides a method for realizing local lifespan control of a semiconductor device, which is based on Embodiment 2 of the present invention, and further includes steps between step S4 and step S5:

[0066] S4(1): remove the impurity source, cover the impurity source on a second surface different from the first surface, and repeat steps S2-S4;

[0067] S4(3): remove the impurity source, then cover the impurity source on the second surface, repeat steps S2-S4, wherein the preset diffusion depth in step S4(1) is greater than the preset diffusion depth in step S4(3) Set the diffusion depth.

[0068] According to the above-mentioned embodiment, the third high lifetime region 120, the second medium lifetime region 121, the third medium lifetime region 122, the fourth low lifetime region 123, and the fifth low lifetime region 124 are formed to realize multi-directional and stepped local areas. lifespan control effect.

[0069] In the above...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for realizing local lifetime control of a semiconductor device, comprising the following steps: covering the first surface of an unmetallized semiconductor device with an impurity source, the impurity source being an element with a recombination center effect or a substance containing the element ;According to the preset diffusion depth, the diffusion coefficient of the impurity source and the change curve of solid solubility with temperature, the parameters of the complementary error function are obtained; according to the parameters of the complementary error function, the diffusion temperature and time are obtained; according to the diffusion temperature and time, Diffusion of the recombination central atom to the target diffusion depth in the semiconductor device; removal of impurity sources; rapid thermal annealing of the semiconductor device to complete the electrical activation of the recombination central atom. The present invention does not require equipment such as helium ion implanters, and only achieves local lifetime control through the diffusion of composite center atoms such as platinum and gold. Compared with traditional global lifetime control, it has the advantage of reduced conduction voltage and better forward performance and switching A performance compromise.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for realizing local lifetime control of semiconductor devices. Background technique [0002] Lifetime control technology is a technology that adjusts the lifetime of non-equilibrium carriers in semiconductors by various methods to improve device performance. [0003] Since bipolar conductive semiconductor devices generally use the conductance modulation effect, in the on-state, the drift region stores electrons and holes (carriers) whose concentration product exceeds its intrinsic product. These additional carriers are called Non-equilibrium carriers, referred to as non-substances, non-equilibrium electrons and holes will recombine one-to-one with time and disappear. Their average existence time is called non-substance lifetime. The rate of net injection of nonons into the impurity region is equal to the rate of recombination of nonons in the drift re...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/38H01L21/324
CPCH01L21/38H01L21/324Y02P70/50
Inventor 李泽宏柳雨真
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com