Monitoring method of wafer rapid heat treatment machine

Abstract

The invention discloses a monitoring method of a wafer rapid heat treatment machine. The method comprises the steps of carrying out ion implantation on an optical silicon wafer to form a monitoring sheet, and testing the resistance value of the monitoring sheet when impurities of the ion implantation are not completely activated. When the monitoring sheet is manufactured, the cleaned optical silicon wafer is treated without time limitation and does not need to be stored in a nitrogen cabinet, so that the manufacturing steps and technical requirements of the monitoring wafer are simplified. According to the invention, the manufacturing steps and technical requirements of the monitoring sheet are simplified; the temperature ranges of 500 to 1000 DEG C before and after metal are monitored, and the purpose of effective monitoring is achieved; wafer processing technology abnormity and wafer scrapping caused by fluctuation and drifting of the temperature of a machine table are prevented; anda good market application value is achieved.

Description

technical field [0001] The invention relates to the field of semiconductor chip production, in particular to a monitoring method for a wafer rapid heat treatment machine. Background technique [0002] With the continuous development of integrated circuit process technology, the integration of semiconductor chips has been continuously improved, and the process feature size has also been reduced. It requires a lower thermal budget and steeper impurity distribution for process technology to meet low leakage. current, high mobility, and short channel length requirements. At present, the thermal budget of the chip mainly depends on the high-temperature process in the wafer production process, and the high-temperature process is divided into high-temperature furnace tube and rapid heat treatment. The high-temperature furnace tube has a long heating and cooling time (about 1 to 2 hours). , boat entry and exit time (about 1 hour) and high temperature stabilization time (0.2 to 0.5 ...

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Problems solved by technology

[0011] by Figure 2 shows that when the temperature changes by 50°C, the resistance change is only about 2 ohms, and the sensitivity of the resistance to temperature is not enough. At the same time, its linearity with temperature change is not good, and the temperature fluctuation of the rapid heat treatment machine cannot be effectively monitored. and drift, which will lead to abnormal wafer processing technology, which will lead to wafer scrapping in severe cases

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