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Schottky device trench structure and preparation method thereof

A trench and device technology, applied in the field of Schottky device trench structure and its preparation, can solve the problems of poor capability, high reverse leakage, low reverse breakdown voltage, etc. Effect

Pending Publication Date: 2020-05-05
爱特微(张家港)半导体技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problems of high reverse leakage, low reverse breakdown voltage, poor capability, high forward voltage drop, and poor stability and reliability of trench Schottky barrier diodes in the prior art, Provide a trench structure of a Schottky device and its preparation method

Method used

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  • Schottky device trench structure and preparation method thereof
  • Schottky device trench structure and preparation method thereof
  • Schottky device trench structure and preparation method thereof

Examples

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Embodiment Construction

[0025] A Schottky device trench structure, characterized in that the depth of the trench is 2.5-3.0 μm, the width of the trench is 0.6-0.75 μm, and the width between the trenches is 2-3 μm. The bottom of the groove is circular.

[0026] A method for preparing a trench structure of a Schottky device, characterized in that it comprises the following steps:

[0027] A: The growth thickness on the epitaxial layer is Oxide layer 1;

[0028] B: Selectively etch the oxide layer 1 by defining a photolithography process to form trenches;

[0029] C: performing gate oxidation on the trench, forming a rough gate oxide layer 2 on the surface of the trench, and the thickness of the gate oxide layer 2 is

[0030] D: perform sacrificial oxidation on the trench surface treated in step C, specifically, use pure dry oxygen to grow a sacrificial oxide layer 3 on the surface of the gate oxide layer 2 at a temperature of 1050-1200°C, so that the sacrificial oxide layer 3 Covering the gate o...

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Abstract

The invention discloses a Schottky device trench structure and a preparation method thereof, which belong to the technical field of electronic devices, The depth of the trench is 2.5 to 3.0 [mu] m. The width of the trench is 0.6 to 0.75 [mu] m, and the width between the trenches is 2 to 3 [mu] m. The inner wall of the trench is flat and smooth by sacrificial oxidation and etching sacrificial oxidation removal methods, so that the Schottky device has ideal electrical parameters and is stable and reliable under a high-temperature condition.

Description

technical field [0001] The invention belongs to the technical field of electronic devices, and in particular relates to a trench structure of a Schottky device and a preparation method thereof. Background technique [0002] As a conversion device from AC to DC, the rectifier device requires unidirectional conduction characteristics, that is, low turn-on voltage and small on-resistance during forward conduction, and high blocking voltage and low reverse leakage when reverse biased. Schottky barrier diodes have been used in power supply applications for decades as rectifier devices. Due to their advantages of low forward turn-on voltage and fast switching speed, they are very suitable for switching power supplies and high-frequency applications. [0003] Schottky barrier diodes are manufactured using the principle of a metal-semiconductor junction formed by contact between a metal and a semiconductor. Traditional planar Schottky barrier diode devices are usually composed of a...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L21/329H01L21/762
CPCH01L29/872H01L29/66143H01L21/76822
Inventor 夏凯
Owner 爱特微(张家港)半导体技术有限公司