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Laser diode

A technology of laser diodes and laser radiation, applied in lasers, laser components, semiconductor lasers, etc., can solve the problems of reduced hole mobility, small conductivity, increased activation energy, etc.

Active Publication Date: 2020-05-05
OSRAM OLED
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as the aluminum content increases, the activation energy for the dopant material magnesium also increases, and at the same time the hole mobility decreases, resulting in a small conductivity

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  • Laser diode
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Embodiment Construction

[0031] exist Figure 1A A cross-section of one embodiment of a laser diode is shown in . The laser diode 10 has a semiconductor layer sequence 12 which is grown on a substrate 1 along a growth direction z. The semiconductor layer sequence 12 is based on nitride compound semiconductors, ie the semiconductor layers of the semiconductor layer sequence 12 have in particular In x Al y Ga 1-x-y N, where 0≤x≤1, 0≤y≤1 and x+y≤1. Substrate 1 is a substrate suitable for growth of nitride compound semiconductors, preferably a GaN substrate.

[0032] To generate the laser radiation, the laser diode 10 contains an active layer 4 which is preferably formed as a single-quantum system structure or as a multi-quantum system structure. The active layer 4 may have a plurality of sublayers, in particular a barrier layer and a sequence of one or more quantum system layers, which in Figure 1A are not shown separately for simplicity.

[0033] The active layer 4 is arranged between the first wa...

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Abstract

A laser diode (10) is described, having a semiconductor layer sequence (12) based on a nitride compound semiconductor material, comprising an n-type cladding layer (2), a first waveguide layer (3A), asecond waveguide layer (3B), and an active layer (4) arranged between the first waveguide layer (3A) and the second waveguide layer (3B) and serving for generating laser radiation, and a p-type cladding layer (6), wherein the p-type cladding layer (6) has a first partial layer (6A) facing the active layer (4) and a second partial layer (6B) facing away from the active layer. The first partial layer (6A) comprises AlxiGai-xiN, wherein 0 <= x1 <= 1 or Alx1Iny1Ga1-x1_y1N, 0 <= x1 <= 1, 0 <= yl < 1 and xl + yl <= 1, and the aluminum content x1 decreases in a direction pointing away from the active layer (4), such that the aluminum content has a maximum value x1max at a side facing the active layer (4) and a minimum value x1min < x1max at a side facing away from the active layer (4). The second partial layer (6B) comprises A1x2Ga1_X2N, where 0 <=-S x2 <= x1min or Alx2Iny2Ga1 -x2_y2N, wherein 0 < x2 < x1min, 0 <= y2 < 1 and x2 + y2 < 1.

Description

technical field [0001] The present application relates to a laser diode, in particular an edge emitter-laser diode, which is based on a nitride compound semiconductor material. [0002] This application claims priority from German patent application 10 2017 122 032.1, the disclosure content of which is hereby incorporated by reference. Background technique [0003] The semiconductor layer sequence of a laser diode typically has a waveguide region with an active layer arranged between a first waveguide layer and a second waveguide layer. A waveguide region is typically disposed between the n-type cladding layer and the p-type cladding layer. [0004] In order to achieve high efficiency, the laser diode should have a small voltage drop. Due to the low conductivity and relatively large thickness, the p-type cladding layer is especially important for the voltage drop. In nitride compound semiconductor-based laser diodes, the p-type cladding layer is made, for example, of p-ty...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/32H01S5/323
CPCH01S5/3215H01S5/32341H01S5/34333H01S5/3213H01S5/3063H01S5/2009H01S5/04253H01S5/04252H01S5/026H01S5/3054H01S5/3407H01S5/3209
Inventor 克里斯托夫·艾克勒马蒂亚斯·彼得扬·瓦格纳
Owner OSRAM OLED