A method for manufacturing an embedded adapter board and its packaging structure

Abstract

The invention discloses an embedded switching board, comprising: one or more rewiring layers arranged inside the switching board; metal pads arranged on the surface of the switching board; A bump structure, wherein the bump structure is used for interconnection with an external chip.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing and packaging. Specifically, the present invention relates to a method for manufacturing an embedded interposer and its packaging structure. Background technique [0002] With the development of miniaturization, integration, and intelligence of electronic products, the complexity of IC chips is greatly increasing, and the number of corresponding IO pins is also greatly increasing. [0003] The embedded multi-chip interconnection bridge realizes interconnection and communication between chips by partially embedding an adapter board in the substrate, and realizes high-density interconnection (500-1000I / O / mm) locally, thereby achieving local bandwidth enhancement. [0004] Figure 1A to Figure 1D A schematic cross-sectional view showing the process of partially embedding the substrate into the adapter plate in the prior art. Such as Figure 1A As shown, the adapter board is emb...

AI Technical Summary

Problems solved by technology

Due to the high demand for I / O density, the diameter and spacing of the openings on the dielectric layer are very small. The current mass-produced technology has a pore diameter of about 38 microns and a hole spacing of 55 microns. With the further development of technology, the I / O density It will become higher and higher, which is a big challenge for the dielectric layer opening process

For laser opening, this process cannot meet the requirements of narrow pitch and small aperture at high interconnection density. In addition, the thickness of the embedded interposer is generally less than 70 microns, usually 50 microns, 30 microns or even lower, resulting in The thickness of the metal contact pad on the surface of the connecting board is about 3 to 5 microns. Therefore, in the process of laser etching the dielectric layer, it is easy to cause defects due to damage to the metal pad on the surface of the connecting board due to unreasonable energy control, which will affect the subsequent hole metallization process and cause electrical damage. This will also lead to a narrower selectivity of the laser processing energy window

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