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Deep ultraviolet light-emitting diode and preparation method thereof

A light-emitting diode and deep ultraviolet technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as poor heat dissipation, low brightness, and short life, and achieve the effects of reducing contact resistance, improving production efficiency, and increasing brightness

Active Publication Date: 2020-05-08
宁波安芯美半导体有限公司
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a deep ultraviolet light-emitting diode and its preparation method to solve the problems of poor heat dissipation, low brightness and short life of deep ultraviolet light-emitting diodes in the prior art due to high contact resistance

Method used

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  • Deep ultraviolet light-emitting diode and preparation method thereof
  • Deep ultraviolet light-emitting diode and preparation method thereof

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Embodiment Construction

[0037] The technical solutions in the embodiments of the present invention will be further clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0038] see figure 1 As shown, the present invention provides a packaging structure of a deep ultraviolet light emitting diode, which includes: a deep ultraviolet light emitting diode 101 , a bracket 102 and a silicon oxide protective layer 103 .

[0039] The chip is also called the chip, which is the luminescent material of the light-emitting diode. It must be isolated from the outside world to prevent the impurities in the air from corroding the chip circ...

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Abstract

The invention provides a deep ultraviolet light-emitting diode and a preparation method thereof, and relates to the technical field of semiconductor devices. The deep ultraviolet light-emitting diodecomprises a substrate; an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer which are arranged on the substrate; a first electrode pad connected to the N-type semiconductor layer; a second electrode pad connected to the P-type semiconductor layer; wherein the first electrode pad includes ohmic electrodes of a metal multilayer alternating structure. According to the invention, the ohmic electrode with a metal multilayer alternating structure is arranged, and a new mesa etching process is provided, so the problems of high contact resistance, poor high temperature resistance, easy aging, rough appearance and the like of the ohmic electrode in the traditional process are solved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a deep ultraviolet light emitting diode and a preparation method thereof. Background technique [0002] Ultraviolet light-emitting diode is a semiconductor solid light-emitting device. It uses solid semiconductor chips as light-emitting materials. It is a new type of ultraviolet light source and has broad application prospects. It is likely to gradually replace traditional ultraviolet mercury lamps. Compared with the traditional mercury vapor ultraviolet discharge light source, ultraviolet light-emitting diodes have many advantages: for example, long life, convenient switching, low working voltage, smaller volume, and easy to carry. In addition, deep ultraviolet light-emitting diodes have a bactericidal effect because of their emission wavelengths of 210-280nm. Compared with the traditional mercury lamp sterilization method, the deep ultraviolet light-emitting diode steri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/38H01L33/40
CPCH01L33/387H01L33/40H01L2933/0016
Inventor 张丽刘亚柱齐胜利吴化胜
Owner 宁波安芯美半导体有限公司
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