Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Gallium nitride power module packaging method and pressurizing device

A technology for power modules and packaging methods, which is applied to semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problems of poor packaging quality and low yield of gallium nitride power modules, and achieve high appearance quality and high reliability. The effect of balanced force and uniform amount of glue

Active Publication Date: 2021-08-31
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a gallium nitride power module packaging method and a pressurizing device, aiming to solve the problems of poor packaging quality and low yield of gallium nitride power modules in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gallium nitride power module packaging method and pressurizing device
  • Gallium nitride power module packaging method and pressurizing device
  • Gallium nitride power module packaging method and pressurizing device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0042] Please also refer to Figure 1 to Figure 4 , Image 6 and Figure 7 , the gallium nitride power module packaging method provided by the present invention will now be described. The gallium nitride power module packaging method includes the following steps:

[0043] Step S101, printing the sealant into the cavity 80 of the molding mold 8, keeping the mold 8 printed with the sealant in a horizontal state and putting it into a vacuum oven at 60°C to 90°C for 15min to 20min to obtain a pre-cured molding glue Ring 6;

[0044] Step S102, attaching the pre-cur...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a gallium nitride power module packaging method and a pressurizing device, which belong to the technical field of power module packaging. Keep the molding mold of the glue in a horizontal state and bake in a vacuum oven at 60-90°C for 15-20 minutes to obtain a pre-cured molded rubber ring; attach the pre-cured molded rubber ring to the package case where the GaN power module is placed , align and mount the package cap with the package shell on which the pre-cured molding rubber ring is mounted; place the package shell with the package cap on the pressurization device, and apply a downward force on the top surface of the package cap Press and hold the pressure; put the pressure device with the preset pressure on the package cap into a vacuum oven at 120-170°C and bake for 3-5 hours, so that the pre-cured molding rubber ring can be re-cured, and the packaged gallium nitride can be obtained power module.

Description

technical field [0001] The invention belongs to the technical field of power module packaging, and more specifically relates to a gallium nitride power module packaging method and a pressurizing device. Background technique [0002] The GaN (Gallium nitride, gallium nitride) power module uses heat sink copper-molybdenum-copper-copper material as the base, Kovar alloy as the lead frame, and uses aluminum oxide ceramic caps for packaging by bonding. The inside of the module is sealed after the chip is sintered or bonded, and the gold wire is bound. [0003] At present, the packaging method of GaN power modules is as follows: After applying sealant around the dam of the tube shell, aligning the tube cap with the tube shell and mounting them, continuously applying a certain pressure, and baking in an oven. The problem with this current method of operation is that the amount of sealant applied to the side wall of the shell is not uniform. The amount of glue produced is inconsis...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/52H01L23/10H01L21/67
CPCH01L21/52H01L21/67121H01L23/10
Inventor 魏少伟袁彪常青松宋银矿汲琳张磊连智富于亮马鹏王净刘爱平张培庆
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com