A kind of miniature light-emitting diode chip and its manufacturing method and display device
A technology for light-emitting diodes and a manufacturing method, which is applied to semiconductor devices, electrical components, circuits, etc., can solve problems such as mutual interference of light and Lightcross, and achieve the effects of improving resolution, reducing light divergence, and reducing distance.
Active Publication Date: 2021-09-21
CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD
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Problems solved by technology
[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a micro light emitting diode chip and its manufacturing method and a display device to solve the problem of two adjacent micro light emitting diode chips after the micro light emitting diode chips are welded on the display panel. The emitted light will interfere with each other due to astigmatism reflection phenomenon, resulting in the problem of Light cross phenomenon
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[0049] Because the light emitted by the chip obtained after cutting the traditional micro-LED chip is a divergent light type, when the chip is welded on the display panel, the light emitted by two adjacent micro-LED chips will interfere with each other, resulting in Light cross phenomenon. The present invention provides a micro light-emitting diode chip and its manufacturing method and display device to solve the problem of Light cross phenomenon between two adjacent micro light-emitting diode chips, because the distance between two adjacent micro light-emitting diode chips on a small-sized panel is closer Therefore, the present invention is particularly suitable for displays with small-sized panels. In order to make the object, technical solution and effect of the present invention more clear and definite, the present invention will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodim...
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The invention discloses a micro light emitting diode chip, a manufacturing method thereof and a display device. The micro light emitting diode chip comprises: a first type semiconductor layer, a light emitting layer and a second type semiconductor layer which are sequentially stacked, and the light emitting layer is located at the Between the first type semiconductor layer and the second type semiconductor layer; and, a reflective layer arranged on the light emitting side of the light emitting layer, the reflective layer is used to block the light emitting layer from the edge of the micro light emitting diode chip emitted light. In the present invention, by setting a reflective layer with a high-reflectivity structure on the first-type semiconductor layer, the light emitted by the light-emitting layer to the edge of the micro-LED chip can be blocked, so as to reduce the divergence of light and make adjacent The distance between the two miniature light-emitting diode chips is smaller, and the Light cross phenomenon does not occur, so that the resolution of the display can be improved.
Description
technical field [0001] The present invention relates to the technical field of micro light emitting diodes, in particular to a micro light emitting diode chip, a manufacturing method thereof and a display device. Background technique [0002] A general light-emitting diode (LED) chip includes a substrate and an epitaxial layer (Epitaxy), the thickness of which is about 100-500 μm, and the size is between 100-1000 μm. In the ongoing research on Micro Light Emitting Diode Display (Micro LED), it is committed to lifting the epitaxial layer with a thickness of about 4-5 μm on the surface of the Micro LED chip by physical or chemical mechanism (Lift-off), and then transplanting it into on the circuit board. In the research of Micro LED, the two technical characteristics of thin film transistor liquid crystal display (Thin Film Transistor Liquid Crystal Display, TFT-LCD) and LED are combined, with low power consumption, high brightness, ultra-high resolution and color saturation,...
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IPC IPC(8): H01L33/46H01L33/00H01L25/16
CPCH01L33/46H01L33/0075H01L25/167H01L33/10H01L25/0753H01L27/156H01L33/005H01L33/60H01L33/32H01L33/382H01L2933/0025
Inventor 杨顺贵黄嘉宏林雅雯洪茂嘉
Owner CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD