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Flexible photodetector based on single crystal silicon nanofilm/graphene and preparation method

A photodetector and single crystal silicon technology, applied in the field of photodetectors, can solve the problems of high production cost, limited application field, and detection performance not as good as silicon-based photodetectors, etc., and achieves excellent performance, good biocompatibility, and expansion. Effects in the field of application

Active Publication Date: 2021-10-22
ZHEJIANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Traditional single crystal silicon / graphene Schottky heterojunction photodetectors have excellent performance, but cannot be flexible, and their application fields are greatly limited. Especially in the field of biomedicine, wearable and flexible electronic devices are showing vigorous development. Vitality; and other types of flexible photodetectors, on the one hand, the detection performance is not as good as silicon-based photodetectors, on the other hand, the manufacturing cost is high, and they cannot be compatible with the existing integrated circuit technology

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  • Flexible photodetector based on single crystal silicon nanofilm/graphene and preparation method
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  • Flexible photodetector based on single crystal silicon nanofilm/graphene and preparation method

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Embodiment Construction

[0033] The present invention will be described in detail below with reference to the accompanying drawings and preferred embodiments, and the purpose and effect of the present invention will become clearer. It should be understood that the specific embodiments described here are only used to explain the present invention and are not intended to limit the present invention.

[0034] Such as Figure 1-2 As shown, the ultra-thin and flexible photodetector based on single crystal silicon nanofilm / graphene heterojunction proposed by the present invention includes: polyimide substrate 1, metal interconnection wire 2, single crystal silicon nanofilm 3 , monoatomic layer graphene 4 and polyimide encapsulation layer 5 .

[0035] The monocrystalline silicon nanofilm 3 and the monoatomic layer graphene 4 have an overlapping region 6 to form a single crystal silicon / graphene Schottky heterojunction. The signals generated at the Schottky heterojunction are drawn out through the metal cont...

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Abstract

The invention discloses a flexible photodetector based on single crystal silicon nanofilm / graphene and a preparation method thereof. vinyl and top polyimide composition. Based on the excellent performance of the bulk silicon / graphene Schottky heterojunction photodetector, the present invention thins the bulk silicon to the nanometer scale, so that the originally large and hard solid silicon becomes thin, flexible and more To a large extent, after being encapsulated by the flexible packaging material polyimide, on the basis of retaining the excellent photodetection performance of the bulk silicon / graphene heterojunction, it also has the advantages of ultra-thin and flexible, combined with polyimide The high insulation and good biocompatibility greatly broaden the application fields of silicon / graphene heterojunction photodetectors, especially in the fields of biomedicine and wearable electronic devices.

Description

technical field [0001] The invention relates to the field of photodetectors, in particular to a flexible photodetector based on single crystal silicon nanofilm / graphene and a preparation method. Background technique [0002] The basic principle of the photoelectric sensor is based on the photoelectric effect. When light is irradiated on certain substances, the energy of the photons will be transferred to the electrons, which will change the state of the electrons, thereby changing the electrical properties of the substance accordingly. A device that converts optical signals into electrical signals. Photodetectors are widely used in communication, medical and health, computer technology, space technology and other fields. [0003] Single crystal silicon / graphene Schottky heterojunction photodetectors have the advantages of high sensitivity, high optical response, and fast response speed, and have important applications in high-speed signal modulation and weak signal detectio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0392H01L31/028H01L31/0352H01L31/108H01L31/18B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01L31/028H01L31/035281H01L31/03921H01L31/03926H01L31/108H01L31/1804Y02P70/50
Inventor 吕朝锋陆明徐杨茅仁伟刘粒祥
Owner ZHEJIANG UNIV
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