Thin layer with tapered pits and containing aluminum components and used for depositing indium-gallium-nitride quantum well
A quantum well and indium gallium nitride technology, which is applied in the field of indium gallium nitride based diode manufacturing, can solve the problems of low quantum efficiency of indium gallium nitride based diodes, poor crystal quality of indium gallium nitride quantum wells, and increased usage of indium raw materials, etc. The effect of reducing indium-containing raw materials, improving quality, and reducing manufacturing time
Active Publication Date: 2020-05-19
NANCHANG UNIV +1
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Problems solved by technology
The disadvantage of this method is that it will lead to an increase in the amount of indium raw materials used in the entire InGaN-based diode preparation process, which will increase the manufacturing cost of the device, and make the preparation of the InGaN-based diodes take a long time. Poor quality, low quantum efficiency of InGaN-based diodes, weak antistatic properties, etc.
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[0019] The present invention will be further described below in conjunction with the embodiments and the accompanying drawings.
[0020] In this embodiment:
[0021] A thin layer with conical pits and aluminum content for the deposition of indium gallium nitrogen quantum wells, which needs to be deposited at a dislocation density of 1×10 8 To 5×10 9 cm -2 On gallium nitride 1 in the range, during the deposition process of part or all of the thin layer, it is necessary to ensure that there is at least 0.1% to 99.9% aluminum in all the metal elements of the thin layer, and the growth temperature is between 900 and 1000 o In the C range, and 0.1 to 1 nm s -1 With the film growth rate within the range, the thin layer 2 with tapered pits and aluminum content for the deposition of indium gallium nitrogen quantum wells can be grown.
[0022] During the deposition process of the thin layer 2 with conical pits and aluminum content for depositing the indium gallium nitrogen quantum well, the l...
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Abstract
The invention discloses a thin layer with tapered pits and containing aluminum components and used for depositing an indium-gallium-nitride quantum well. The thin layer is structurally characterized in that, in the gallium nitride based diode, the thin layer is located between gallium nitride and the indium-gallium-nitride quantum well, wherein the gallium nitride is in the front, and the indium-gallium-nitride quantum well is in the rear; the tapered pits are located in the surface layer of the thin layer, and the aluminum elements does not need to be continuously and evenly distributed and can be discretely or randomly distributed at any position of the thin layer. The method has the advantages that (1) the quality of the deposited indium-gallium-nitride quantum well crystal is improvedin the manufacturing process of the indium-gallium-nitride-based diode; (2) the indium-containing raw material used in the manufacturing process of the indium-gallium-nitrogen-based diode is reduced,and the manufacturing cost of the indium-gallium-nitrogen-based diode is saved; (3) the manufacturing time of the indium-gallium-nitrogen-based diode is shortened, and the production rate of the indium-gallium-nitrogen-based diode is improved; and (4) the electric leakage at the misplacement of the indium-gallium-nitrogen-based diode is reduced, and the electrical and optical properties of the indium-gallium-nitrogen-based diode are improved.
Description
Technical field [0001] The invention relates to the field of indium-gallium-nitrogen-based diode manufacturing, in particular to a thin layer with conical pits and containing aluminum for depositing indium-gallium-nitrogen quantum wells. Background technique [0002] At present, in the well-known indium-gallium-nitrogen-based diodes (such as indium-gallium-nitrogen-based yellow-green light-emitting diodes), a thin layer containing indium is usually used as the substrate for depositing high indium-content indium-gallium-nitrogen quantum wells. It is necessary to grow a thin layer containing indium between the gallium oxide and the indium gallium nitride quantum well. By increasing the indium content in the thin layer, the compressive strain suffered by the indium gallium nitride quantum well deposited on the thin layer can be relieved. The disadvantage of this method is that it will increase the amount of indium raw materials used in the entire indium-gallium-nitrogen-based diode ...
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Login to View More IPC IPC(8): H01L33/20H01L23/60
CPCH01L23/60H01L33/20
Inventor 高江东张建立江风益
Owner NANCHANG UNIV