Semiconductor chip and semiconductor laser

A semiconductor and laser technology, applied in the field of semiconductor chips and semiconductor lasers, can solve problems such as the inability to achieve high beam quality external cavity laser output, and achieve the effects of beam quality output, reduced process difficulty, and efficient overlapping

Active Publication Date: 2020-05-19
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the applicant found in the process of further research on the semiconductor laser with wide ridges that the structure of the semiconductor chip has a high impact on the elect

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor chip and semiconductor laser
  • Semiconductor chip and semiconductor laser
  • Semiconductor chip and semiconductor laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in combination with specific embodiments and with reference to the accompanying drawings. It should be understood that these descriptions are exemplary only, and are not intended to limit the scope of the present invention. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present invention.

[0037] A schematic structural diagram of a semiconductor laser according to an embodiment of the present invention is shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Angleaaaaaaaaaa
Login to view more

Abstract

The invention discloses a semiconductor chip and a semiconductor laser, and the semiconductor chip is used for being arranged in the semiconductor laser and comprises at least one gain region; the upper surface and the lower surface of each gain region are plated with electrodes respectively; and the shape of at least one electrode is matched with the resonant light path of the laser in the gain region. On one hand, according to the semiconductor chip, by setting the shape of the electrode to be matched with the resonant light path of the laser in the gain region, efficient overlapping of thegain region and an external cavity laser mode can be realized; on the other hand, the gain length of the outer cavity can be far greater than the gain length of the inner cavity and the maximum widthof amplified spontaneous emission (ASE) in structure; meanwhile, the laser threshold of the inner cavity can be improved by matching with a coating technology, so that the inner cavity laser and ASE are inhibited, and high-efficiency high-beam-quality outer cavity semiconductor laser output is realized; and meanwhile, ridge etching is not needed, so that the cost can be reduced, and the modulationeffect of the chip on external cavity laser is avoided.

Description

technical field [0001] The invention relates to the technical field of laser devices, in particular to a semiconductor chip and a semiconductor laser. Background technique [0002] Semiconductor lasers use semiconductor materials as the gain medium, use electrons to transition between energy levels to emit light, and directly use parallel mirrors formed on the cleavage surface of semiconductor crystals to form a resonant cavity, and form optical oscillation feedback under electrical injection to generate light radiation amplification. Achieve laser output. Semiconductor lasers have the highest electro-optical conversion efficiency among current lasers, and the electro-optical conversion efficiency can reach 70%. And the semiconductor laser is also the laser with the widest wavelength range, the strongest adaptability and reliability, and the lowest mass production cost. However, due to the small size of the resonant cavity of the semiconductor laser (usually millimeter-sca...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01S5/042H01S5/14
CPCH01S5/0425H01S5/14
Inventor 王小军宗楠彭钦军许祖彦杨晶薄勇
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap