Method for forming trench isolation structure

A technology of trench isolation and trench, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., and can solve problems such as poor surface flatness, impact on the isolation performance of trench isolation structures, and influence on the precision of photolithography processes, etc.
CN111211039BActive Publication Date: 2020-11-20NEXCHIP SEMICON CO LTD
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Patent Information

Authority / Receiving Office
CN Ā· China
Patent Type
Patents(China)
Current Assignee / Owner
NEXCHIP SEMICON CO LTD
Publication Date
2020-11-20

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Abstract

The invention provides a trench isolation structure and a forming method thereof. A trench is filled with an oxygen-containing insulating layer; boron ions are injected into the trench, so that boronoxide can be formed; and therefore, an oxygen-containing insulating layer containing the boron oxide can be utilized to form the insulating material of the trench isolation structure, equivalently, the insulating performance of the insulating material of the trench isolation structure is improved, and the isolation performance and trench filling capacity of the trench isolation structure are improved at the same time.
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Description

technical field

[0001] The invention relates to the technical field of semiconductors, in particular to a trench isolation structure and a forming method thereof. Background technique

[0002] With the development of semiconductor technology, the size of semiconductor devices tends to decrease and their density gradually increases, especially in the process technology of VLSI (Very Large Scale Integration Circuit, VLSI). As the scale of integration increases, the isolation between adjacent components is particularly important. Usually, a trench isolation structure can be used to realize electrical isolation between adjacent components, and the existing method for forming the trench isolation structure generally includes the following steps.

[0003] The first step, specific reference Figure 1a As shown, a substrate 10 is provided, and a mask layer 12 is formed on the substrate 10 , so that a groove 10 a is formed in the substrate 10 using the mask layer 12 as a mask. [0...

Claims

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