32 results about "Borenium ion" patented technology

The invention discloses a boron isotope abundance measuring method using a carbon nanotube as an ion emitting agent. The boron isotope abundance measuring method comprises the following steps: (1) preparing a sample: preparing a carbon nanotube suspension, preparing a generating agent solution, and preprocessing rhenium strips; (2) loading the sample: manufacturing one of the rhenium strips of a preprocessed double-strip insert into a sample strip, and loading the sample strip together with an ionization strip onto a sample turnplate for following measurement; and (3) measuring the sample: sending the strip-loaded turnplate into an ion source, starting a spectrometer, heating the sample strip and the ionization strip, and when ion current occurs, starting data collection. By using the carbon nanotube as the ion emitting agent and by optimizing a sample preparing method, a sample loading technology and measuring conditions during use of the carbon nanotube as the ion emitting agent, the boron ion emitting intensity and the ionization efficiency are significantly improved and the stability of an ion flow is also improved to some extent, the measuring accuracy is improved, and the sample loading amount and the measuring temperature are reduced.

The invention discloses a preparation method for a boron-doped single-particle-layer nano-diamond film. The method includes the following steps that (1) a hot filament chemical vapor deposition method is adopted for preparing a single-particle-layer nano-diamond film with the thickness being 300-600 nm on a single-crystal silicon substrate; (2) an ion implantation method is adopted, boron ions are injected into the single-particle-layer nano-diamond film obtained in the step (1), and a film with the injected boron ions is obtained; and (3) vacuum annealing is conducted on the film which is obtained in the step (2) and injected with the boron ions, and then the boron-doped single-particle-layer nano-diamond film is obtained. The boron-doped single-particle-layer nano-diamond film prepared through the method has excellent electrochemical performance, especially has good electrochemical catalysis performance, and can be used for electrochemical catalysis oxidation treatment on organic wastewater.

The present invention relates to a method of economical extraction of magnesium, boron and calcium, while minimizing the loss of lithium, from a lithium bearing solution. More specifically, the present invention provides a method for economical extraction of magnesium, boron, and calcium, while minimizing the loss of lithium, from a lithium bearing solution comprising the steps of: (a) adding an alkali in the lithium bearing solution to precipitate magnesium hydroxide; (b) absorbing boron ions on the surface of the magnesium hydroxide by adjusting the pH to about 8.5 to about 10.5; and (c) simultaneously extracting magnesium and boron by filtering the magnesium hydroxide absorbed with the boron ions from the lithium bearing solution.

The invention relates to a method for manufacturing a super junction structure. An existing method is complex in process and high in cost. The method for manufacturing the super junction structure is characterized by including the steps of preparing an N-type heavy doping N+ substrate and forming a first N-type epitaxial layer; depositing a protective oxide layer on the upper surface of an N-type drift region and defining a groove etching region; injecting boron ions to the two side walls of a groove to form a P post region; growing a second N-type epitaxial layer in the groove and on the upper surface of the N-type drift region, and growing a P-type epitaxial layer on the second N-type epitaxial layer to fill the groove; flattening and smoothening the upper surface. According to the method for manufacturing the super junction structure, a p post region and an n post region with a high depth-to-width ratio can be formed, a groove with a high depth-to-width ratio does not need to be etched, the process is simple, the cell size of a device can be effectively reduced, specific on-resistance is lowered, and cost is reduced.

The invention discloses an o-carborane derivative and a synthesis method thereof. The method includes: step 1, taking 5-fluoro-2-methyl-1H-indene or 5-trifluoromethyl-2-methyl-1H-indene as a reactioninitiator, adopting aluminum trichloride as a catalyst, and carrying out reaction with 1-chloroacetic acid to obtain an intermediate 2; step 2, reacting the intermediate 2 with N-bromosuccinimide by taking DMF as a reaction solvent to obtain an intermediate 3; and step 3, reacting the intermediate 3 with o-carborane in an organic solvent or ionic liquid under an alkaline condition to obtain the corresponding o-carborane derivative. According to the invention, fluorine ions and relative hydrophilic groups are introduced for modification through chemical synthesis, the purposes of reducing toxicity and increasing compound polarity and cell affinity are achieved, so that the technical effect of targeted enrichment and high concentration of boron ions in tumor cells is achieved, and then the technical bottleneck that p-borane phenylalanine (BPA) is discharged by an "anti-transport" mechanism after the concentration of the BPA in the tumor cells reaches a certain number 1 is solved.

This invention is about a method to make three-terminal spin transfer torque transistor magnetic random access memory (ST3-MRAM) cell using plasma based ion implantation. The core memory stack of such ST3-MRAM cell contains a bottom digit line (or VIA), a thick dielectric insulating layer, a memory layer, another thin dielectric layer, and a magnetic reference layer on the top. After the formation of the top magnetic reference pillar by photolithography patterning and etching, the outside region of the magnetic memory layer is converted to a non-magnetic conducting lead by heavy doping of boron ions generated by plasma from boron hydrogen (BxH3x) containing gas.

The invention provides a trench isolation structure and a forming method thereof. A trench is filled with an oxygen-containing insulating layer; boron ions are injected into the trench, so that boronoxide can be formed; and therefore, an oxygen-containing insulating layer containing the boron oxide can be utilized to form the insulating material of the trench isolation structure, equivalently, the insulating performance of the insulating material of the trench isolation structure is improved, and the isolation performance and trench filling capacity of the trench isolation structure are improved at the same time.

The invention discloses a preparation method of a boron ionic liquid containing super capacitor. The method comprises the steps of weighing boron-containing lithium salt and an organic compound according to the mixing ratio under an argon atmosphere condition in a gloves box; agitating and heating to obtain a stable, uniform and transparent ionic liquid solution; assembling prepared active carbon electrodes into the super capacitor. The method has the advantages that the lithium ion liquid electrolyte is high in safety and stability; in addition, no additives are added; the high electrochemical voltage is able to increase the energy storage of the super capacitor on the premise that the high energy density and circulating performance are remained.

The invention belongs to the field of deboration of desalinated seawater, and relates to an adsorbent for removing boron from desalinated seawater as well as a preparation method and application of the adsorbent for removing boron from desalinated seawater. Nano ferroferric oxide particles are used as a matrix, and chemical modification is performed on the nano ferroferric oxide particles by using SiO2; and finally, N-methyl glucosamine with specific selectivity is introduced for boron, thereby conveniently preparing a novel magnetic boron-removing adsorption material. The prepared material is used for the boron removal process of desalinated seawater, and a product with excellent performance is provided for the application of removing boron ions in the desalinated seawater. Experimental results show that the prepared material is excellent in adsorption performance, and the static boron removal rate can reach 81.21-97.42%. The prepared material has ferromagnetism and boron removal specificity, is convenient to prepare and recycle, is suitable for the boron removal process of a low-boron-content system, and avoids the problem of environmental pollution in a traditional adsorbent preparation method. The adsorbent has a potential application prospect in seawater desalination and boron removal.

The invention provides three methods for treating a fluorinated surface, which is a non-negligible problem of the interior of an ion implanter, and may become more serious when a low-energy fluorine-containing ion beam is implanted to a carbon surface and/or a silicon surface. Firsty, hydrogen and/or hydrogen-containing ions (atomic and/or molecular) is introduced to the fluorine-containing surface, so that the fluorine bond is replaced by the hydrogen bond, and then the fluorine-containing particles are removed. Secondly, a boron ion beam (especially a boron ion beam with a clean formula) isimplanted onto the fluorinated surface, so that the fluorine-containing particles are removed. Thirdly, the temperature of the fluorinated surface is adjusted, generally is heated, to a temperature range, so that the fluorine bonding is weakened and the fluorine-containing particles are easily volatilized and removed. Optionally, the fluorine-containing particles can be continuously, alternativelyor flexibly removed in a vacuumizing manner.

The invention discloses a 7-hydroxyl chelating cross-linking agent and a preparation method thereof, and the preparation method is realized by the following steps: step 1, adding caustic alkali into water to obtain alkali liquor for later use, dropwise adding short-chain chlorohydrin and the alkali liquor into 2-hydroxy-1, 3-propane diamine, and reacting to obtain 5-hydroxyl propane diamine; 2, continuously dropwise adding short-chain chlorohydrin into the 5-hydroxy propane diamine aqueous solution for reaction, and obtaining 7-hydroxy propane diammonium quaternary ammonium salt after dropwise adding reaction; and 3, uniformly mixing the 7-hydroxy propylene diammonium quaternary ammonium salt with pentaerythritol according to a ratio to obtain a 7-hydroxy chelating cross-linking agent, and carrying out a firm complexation reaction on seven hydroxyls contained in the chemical structure of the 7-hydroxy chelating cross-linking agent and boron ions to ensure the stability of the boron ions in the sewage. The content of boron ions in the complexing pollution of the 7-hydroxyl chelating cross-linking agent is greatly improved.

An IGBT and a manufacturing method therefor, wherein a target region in the IGBT is doped with first ions; the target region comprises at least one of a P-type substrate (11), a P-type well region (13), and a P-type source region (14); and the diffusion coefficient of the first ions is greater than the diffusion coefficients of boron ions. A PN junction formed by means of the present invention is a gradual junction, thereby improving breakdown voltage, shortening turn-off time, and improving anti-latch capability.

The invention relates to a small glass bottle with increased chemical resistance made of a boron-containing multi-component glass, comprising a fluid pharmaceutical active agent preparation and a closure. The small glass bottle has a total volume < 4.5 ml, and the filling level of the small glass bottle with the pharmaceutical active agent preparation is max. 0.25. According to one variant, when measured at a measuring site below the plane of the container centre, based on a concentration depth profile at a depth in the region of 10 to 30 nm, the concentration of the boron-ions has a value averaged over the measurement values of the concentration depth profile, which has an increase of max. 30% in relation to the concentration of boron-ions, when measured based on a concentration depth profile at a depth in the region of 10 to 30 nm with a measuring site in the plane of the container centre. According to another variant of the invention, the glass at the base has a composition on the internal wall with a higher SiO2 proportion than on the side wall and on the transition thereof into the base

The invention discloses a polyborate binder and a preparation method and application thereof. The preparation method selects an organic ligand which comprises one or more functional groups of hydroxyl, carboxyl and sulfo, and comprises the steps of adding the organic ligand and a boron ion compound into a water solvent, conducting mixing, and conducting reacting to obtain the polyborate binder. The water-soluble inherent microporous conductive polyborate binder synthesized by adopting relatively cheap raw materials has higher bonding strength and lithium ion conductivity, has an excellent effect when being used for a silicon-based negative electrode material, and also has very obvious advantages even when being used for traditional electrode materials such as lithium iron phosphate, lithium manganate and graphite. Moreover, the binder adopts cheap commercial raw materials, is synthesized through a simple process capable of realizing mass production, and has a huge application prospect.

The invention provides a process method for increasing the ID of an HVPMOS. The method comprises the steps of forming an NWELL region on a P-type substrate; sequentially forming a silicon dioxide layer and a silicon nitride layer from bottom to top on the P-type substrate; etching the silicon nitride layer and exposing the silicon dioxide layer to form a window; implanting boron ions into the shallow NWELL region through the window and then carrying out propulsion in an atmosphere of nitrogen and oxygen to form an NWI region; and forming an isolation region at an interface of the window. AfterNWI is formed for boron ion implantation, the propulsion process of an original nitrogen atmosphere is changed to propulsion in the nitrogen and oxygen atmosphere, so that the diffusion coefficient of the boron ions in the silicon dioxide is increased, the boron ion concentration gradient is changed, the ID of the HVPMOS is increased, and the influence on other parameters is little.