14 results about "Borenium ion" patented technology

The invention discloses a manufacturing method of a silicon carbide MOS device and the silicon carbide MOS device. According to the manufacturing method of the silicon carbide MOS device, aluminum ions and boron ions are injected through the same ion injection region, basic structures of a P + region and a P-region of the silicon carbide MOS device are formed by utilizing diffusivity difference of the aluminum ions and the boron ions in a silicon carbide material, the production process is simplified, and the manufacturing cost is reduced; multiple times of photoetching, etching turbidity and film regeneration are not needed in the whole manufacturing method, so that the production period is shortened; in addition, according to the manufacturing method, the silicon dioxide film layer is grown through deposition, and the silicon dioxide side wall is formed in the ion implantation window through dry etching; the method solves the problem that the doping concentration is difficult to control accurately and the electrical performance of the device is affected when aluminum ions are injected into the P-region in the traditional process by forming the ion injection region and injecting two ions with different properties to form the P + region and the P-region, and ensures the doping concentration of the P + region and the P-region by injecting the ions with different diffusivity.

The invention discloses a production method of a high-efficiency boron-removing ion exchange membrane, which comprises the following steps of: weighing special CH-99 boron ion chelating resin, A-23 strong-base anion exchange resin and modified high-density polyethylene according to a ratio, putting into a high-speed mixing stirrer, uniformly mixing at normal temperature, mixing, cutting into small blocks of materials, and granulating to obtain the high-efficiency boron-removing ion exchange membrane. Feeding into an extruder, and calendering into sheets; according to the production method of the high-efficiency boron-removing ion exchange membrane, the total exchange capacity of the ion exchange membrane made of the boron-removing ion exchange resin reaches 0.8 meq / ml, the equilibrium boron content reaches 5.7 meq / ml, and the boron treatment capacity is improved by 2-3 times compared with that of a common membrane, so that no crystal is generated after most of boron elements are taken out from an electrode water chamber, a runner is ensured to be unblocked, and the service life of the membrane is prolonged. And the preparation method is simple and reasonable, and has the advantages of mild reaction conditions, high yield, low energy consumption, few pollutants and suitability for large-scale production.

The invention relates to the field of water purification, in particular to an electronic-grade ultrapure water process optimization system which comprises the following steps: S1, pretreatment: pretreating raw water to preliminarily remove trapped suspended matters, organic matters, oxidizing substances and the like in the raw water to obtain water with low carbonate and bicarbonate; s2, RO water treatment: further treating the pretreated water through a reverse osmosis system to remove bacteria, viruses, colloids, organic matters and the like in the water; s3, special EDI (electrodeionization) treatment: treating the water subjected to RO water treatment by a continuous electrodeionization technology to remove silicon dioxide and boron ions in the water; s4, fine treatment: further treating the water subjected to the special EDI treatment, removing metal cations, anions, silicon ions and boron ions in the water, and enabling the terminal effluent to meet the water use requirement, the problem that the water quality of produced water in a high-salt-content region cannot meet the requirement in a traditional mode is solved, and the effect of improving the water quality of the produced water can be achieved.

According to the HEMT device and the preparation method thereof provided by the invention, the boron ions are doped in the part, located in the non-gate region, of the barrier layer, so that the stress of a heterojunction interface can be further increased, the concentration of two-dimensional electron gas in the channel layer can be greatly improved, and then the on-resistance is reduced; and the part of the barrier layer located in the gate region is not doped with boron ions or only has a small amount of diffused boron ions, so that the threshold voltage of the device is not influenced, the device is ensured to have relatively high threshold voltage, further, the aluminum component in the aluminum-gallium-nitrogen barrier layer is reduced, and the performance of the device is improved. And the thickness of the barrier layer can be further reduced, so that the threshold voltage of the device can be further improved, and the problem that the threshold voltage and the on-resistance of the device are mutually restricted is effectively relieved. In addition, boron ions are doped in the barrier layer, and new operation equipment and process do not need to be developed, so that convenient operation can be carried out.

The invention provides a boron-zinc double-doped manganese-rich-based positive electrode material coated with a nitrogen-containing carbon material and a preparation method and application thereof, and belongs to the technical field of electrode materials. The preparation method comprises the following steps: mixing a manganese-based ternary hydroxide precursor, a lithium salt and zinc borate, and then carrying out ball milling treatment and calcination treatment to obtain the boron-zinc double-doped manganese-rich-based positive electrode material. And mixing the boron-zinc double-doped manganese-rich-base positive electrode material and a nitrogen-containing organic matter in a solvent, and then carrying out spray drying and carbonization treatment to obtain the nitrogen-containing carbon material coated boron-zinc double-doped manganese-rich-base positive electrode material. Boron ions and zinc ions are embedded into the boron-zinc double-doped manganese-rich-based positive electrode material coated with the nitrogen-containing carbon material, the outside of the boron-zinc double-doped manganese-rich-based positive electrode material coated with the nitrogen-containing carbon material is coated with the nitrogen-containing carbon layer, boron-oxygen chemical bonds in the positive electrode material are stabilized through doping of the boron ions, meanwhile, oxygen loss is prevented, and the interplanar spacing of the material is increased through doping of the zinc ions; and meanwhile, the layered electrode is supported and protected in the charging and discharging process, so that the process of converting the layered material into spinel is inhibited.

The invention discloses a boron isotope-based method for identifying underground water polluted by flowback fluid, and relates to the technical field of environmental protection. The method comprises the following steps: depicting a boron isotope equilibrium fractionation state between a water-containing medium and underground water before pollution; after pollution occurs, when boron ions and boron isotopes in flowback fluid and underground water are only conservatively mixed but not subjected to new equilibrium fractionation, the ratio of the boron isotopes in the mixed liquid is conservative under different pollution intensities; when boric acid in the polluted water body reaches new hydrolysis equilibrium and boron isotope equilibrium fractionation is initiated, the boron concentration and the boron isotope ratio are adsorbed to the water-containing medium through new equilibrium fractionation; according to the isotope conservative binary mixed model, the boron isotope ratio and the boron concentration of the polluted underground water are obtained, a response curve of the boron isotope and the boron concentration of the polluted underground water is constructed, and early pollution is recognized. By establishing the boron isotope quantitative model of the underground water polluted by the flow-back fluid, the accuracy of a pollution result reflecting real field conditions is improved.

This invention relates to the field of metallurgical pelletizing technology, and discloses a method for batching highly reducible pellets based on secondary iron-bearing resources. The method includes the following steps: 80.0 to 84.77 parts by weight of secondary iron-bearing resources, 13.0 to 16.25 parts by weight of iron concentrate, and 1.5 to 2.5 parts by weight of light-calcined magnesia are mixed at high shear to obtain a mixed dry powder; the mixed dry powder is fed into a pelletizer, and a calcium-boron double-crosslinked lignin hydrosol containing 0.73 to 1.25 parts by weight of dry basis components is sprayed to obtain green pellets; the green pellets are then sequentially subjected to hot air flow drying, preheating treatment, and solid-phase roasting to obtain pellets, which are then cooled. In this invention, the hydrosol forms a physical barrier layer at the interface of the light-calcined magnesia particles, slowing down the penetration of free water molecules into the interior and inhibiting the volume expansion caused by magnesia hydration; the residual boron ions from solid-phase roasting decompose into the iron mineral crystals penetrate into the interior, causing lattice distortion and reducing the reduction activation energy.

The invention provides a method and a device for utilizing lithium precipitation waste liquid. The method comprises the steps that S1, the lithium precipitation waste liquid is subjected to boron removal treatment, boron-removed waste liquid and resin regeneration boron-containing enriched liquid are obtained, the lithium precipitation waste liquid contains sodium ions, carbonate ions, chloride ions and / or sulfate ions and boron ions, and the concentration of lithium ions in the lithium precipitation waste liquid is smaller than 10.5 ppm; s2, the boron-removed waste liquid enters a nanofiltration membrane system to be separated, and concentrated water and permeate liquid are obtained; and S3, adjusting the pH value of the permeate liquid, and pumping the permeate liquid into a bipolar membrane electrodialysis system to obtain an acid liquid and an alkali liquid. The lithium precipitation waste liquid is subjected to boron removal treatment and boron regeneration, boron resources in the waste liquid are recycled, and the enriched boron solution is used for preparing borax; and then the wastewater enters a nanofiltration membrane system, a sodium carbonate solution in the wastewater is separated out, residual permeate enters a bipolar membrane electrodialysis system, and acid liquor and alkali liquor are obtained.

This invention discloses an iodonium salt photoinitiator and its application in the preparation of treatment-free CTP thermal printing plates. The general formula of the iodonium salt photoinitiator is shown in Formula 1, wherein R1 is a substituted or unsubstituted alkyl or substituted or unsubstituted alkoxy group having 2-9 carbon atoms, and R2, R3, R4, and R5 are independently hydrogen atoms, alkyl groups, halogens, hydroxyl groups, carboxyl groups, amino groups, alkoxy groups, ester groups, nitro groups, and are tetraphenylboron ions, boron tetrafluoride ions, boron hexafluoride ions, phosphorus hexafluoride ions, arsenic hexafluoride ions, tellurium hexafluoride ions, halide ions, perchlorate ions, acetate ions, or trifluorosulfonate ions. The iodonium salt photoinitiator with the structure of this application can be used to prepare treatment-free CTP thermal printing plates, and can improve digital imaging speed and reduce crystals in the precursor of the formed negative lithographic printing plate. At the same time, the prepared treatment-free CTP thermal printing plate has excellent imaging speed and printing durability.

An assembly for ion implantation is provided herein. An assembly comprises at least one vessel configured to be fluidly coupled to an arc chamber of an ion implantation device. The at least one vessel comprises a gas component comprising BF3 and B2F4. When the gas component is supplied from the at least one vessel to the arc chamber for implantation into a substrate, a beam current of boron ions generated from the gas component is greater than a beam current of boron ions generated from a control gas component. Related systems, including ion implantation systems, and related methods are provided herein.

The application discloses a preparation process of a boron adsorption purification filter element for an ultrapure water system, and comprises the following steps: step one, selecting PTFE nanofiber nonwoven felt as a base material; step two, performing plasma pretreatment on the PTFE nanofiber nonwoven felt; step three, placing the activated PTFE nanofiber nonwoven felt in an initiation type chemical vapor deposition device, performing vacuum pumping, selecting GMA, EGDMA and an initiator TBPO to perform initiation type chemical vapor deposition, and depositing a polymer film according to the same gradient pressure to obtain modified PTFE felt; step four, immersing the modified PTFE felt in a 5% NMG solution to perform cyclic immersion; and finally, performing multiple cyclic washing. The preparation process of the boron adsorption purification filter element for the ultrapure water system is very superior in boron removal effect, can make boron ions reach a trace level, and the prepared boron adsorption purification filter element has little TOC dissolution.

The invention relates to boron fluoride mixed gas and application thereof in an ion implantation system, a fluid supply container is filled with mixed gas in sequence, the mixed gas is composed of doped gas and hydrogenated gas, the doped gas is boron fluoride, the volume percentage of the boron fluoride is 90%-95%, the volume percentage of the hydrogenated gas is 5%-10%, and the volume percentage of the doped gas is 5%-10%. By introducing the hydrogenated gas and optimizing the ratio of the hydrogenated gas to boron fluoride, higher and more stable boron ion beam output can be realized under the condition of lower gas flow when the device is applied to an ion implantation system, and the stable operation time is remarkably prolonged.

The invention discloses a VLD terminal structure, a preparation method and a preparation system thereof, and a storage medium. The terminal structure comprises a substrate; a VLD terminal ring region is formed downwards from the surface of the substrate; the first groove region is formed in the front part of the VLD terminal ring region, and the first LOCOS oxide layer grows in the first groove region; the second trench region is formed in the rear part of the VLD terminal ring region, and the second LOCOS oxide layer grows in the second trench region; the first groove region is adjacent to the second groove region, and the depth of the first groove region is greater than that of the second groove region. The VLD terminal structure with high reliability is formed through twice mask photoetching, LOCOS growth and CMP removal, two oxide layer steps are realized, boron ion implantation and annealing in a terminal region are matched, the boron ion implantation dosage can be further improved on the premise of being not affected by movable ion charges of a process production line, the process is simple and reliable, and the implementation difficulty is low.

The invention discloses a planar silicon carbide MOSFET structure and a manufacturing method thereof. According to the manufacturing method of the planar silicon carbide MOSFET structure, the aluminum ions (forming the P-1 region) and the boron ions (forming the P-2 region) are injected into the same ion injection region in sequence, the diffusion characteristics of the aluminum ions and the boron ions in the silicon carbide material are utilized, transverse extension of the P-2 region can be achieved without additional mask and etching steps, the technological process is simplified, and the manufacturing cost is reduced. And the electrical performance of the device is optimized. Besides, the silicon carbide MOSFET structure is planar, the electric field distribution of the planar silicon carbide MOSFET structure in a high-power scene is relatively uniform, and the problems of local breakdown or current leakage and the like are reduced.