Structure and preparation method of TFT substrate

A manufacturing method and substrate technology, which are applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of strict requirements on mask accuracy, difficult machine debugging, and long time consumption, achieving low production costs, The effect of simple production and low production cost
CN105070686AActive Publication Date: 2015-11-18TCL CHINA STAR OPTOELECTRONICS TECH CO LTD

Patent Information

Authority / Receiving Office
CN ยท China
Current Assignee / Owner
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
Publication Date
2015-11-18

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Abstract

The invention provides a structure and preparation method of a TFT substrate. According to the preparation method, a multi-step filming manner is employed in the process of preparing an amorphous silicon layer, boron ion implantation is carried out on the amorphous silicon layer via CVD surface processing by utilizing a boron hydride gas after each step of filming, and the amorphous silicon layer doped with boron ions is obtained. According to the structure of the TFT substrate, implantation of boron ions is completed during amorphous silicon filming of a channel region, it is not required to doping the channel region independently after the channel region is formed, the process is effectively simplified, and the production cost is reduced.
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Description

technical field

[0001] The invention relates to the field of display technology, in particular to a manufacturing method of a TFT substrate and a structure of the TFT substrate. Background technique

[0002] In the field of display technology, flat panel displays such as Liquid Crystal Display (LCD) and Organic Light Emitting Diode (OLED) have gradually replaced CRT displays.

[0003] Generally, a liquid crystal display device includes a housing, a liquid crystal panel disposed in the housing, and a backlight module disposed in the housing. Among them, the structure of the liquid crystal panel is mainly composed of a thin film transistor array substrate (ThinFilmTransistorArraySubstrate, TFTArraySubstrate), a color filter substrate (ColorFilter, CF), and a liquid crystal layer (LiquidCrystalLayer) arranged between the two substrates. The rotation of the liquid crystal molecules in the liquid crystal layer is controlled by applying a driving voltage on the two glass substrat...

Claims

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